Thermal annealing induced mazy structure on MoO3 thin films and their high sensing performance to NO gas at room temperature

Synergistic CNFs/CoS2/MoS2 Flexible Films with Unprecedented Selectivity for NO Gas at Room Temperature

“…The values of | S NO / S NO 2 |, | S NO / S CH 4 |, and | S NO / S NH 3 | of CNFs/CoS 2 /MoS 2 were 43, 42, and 8, respectively. The selectivity to NO of CNFs/CoS 2 /MoS 2 composite films was far higher than that of previously reported NO sensors based on ZnO, MoO 3 , MoS 2 , ZnO/CdO, n-MoS 2 /p-GaN, and nitrogen-doped graphene quantum dot-TiO 2 ( K was in the range of 1–9 in those reports). Specifically, the sensor based on ZnO nanobelts synthesized using the carbothermal reduction method exhibited an appreciable response toward H 2 S and NO at room temperature .…”

“…The response of nitrogen-doped graphene quantum dot-TiO 2 to NO was 1.7, 2.4, and 7.0 times higher than that of H 2 S, H 2 , and CO gases at room temperature, respectively . Selectivity was related to gas molecular diameter, bond energy, surface reaction kinetics, and the distinct interaction with films . According to first-principles calculations, NO molecules had higher adsorption energy and could be strongly adsorbed on MoS 2 nanosheets compared with other gas molecules such as NH 3 and CH 4 .…”

“…Specifically, the sensor based on ZnO nanobelts synthesized using the carbothermal reduction method exhibited an appreciable response toward H 2 S and NO at room temperature . The mazy structure of MoO 3 exhibited good selectivity to NO gas with respect to SO 2 , NH 3 , and H 2 gases . The selectivity coefficient of the monolayer MoS 2 gas sensor prepared by facile chemical vapor deposition for | S NO / S H 2 S |, | S NO / S NH 3 |, and| S NO / S H 2 | is found to be 2.1, 3.2, and 6.41, respectively .…”

Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room temperature

“…2. Room temperature gas sensors based on single phase semiconducting metal oxide nanostructures 2.1 N-type semiconducting metal oxide nanostructures and gas sensors N-type SMONs are the most reported sensing materials for RT resistive gas sensors, and they include ZnO, [152][153][154][155][156] SnO 2 , [157][158][159][160] In 2 O 3 , 161 WO 3 , 162 TiO 2 , [163][164][165][166] Fe 2 O 3 , [167][168][169] MoO 3 , 170 174 acetone, 175 alcohol, 106 HCHO, 176 liquefied petroleum gas (LPG), etc. Table 1 summarizes some of the reported RT sensors using the n-type SMONs.…”

Sputtering pressure influenced structural, electrical and optical properties of RF magnetron sputtered MoO3 films

“…In this phase, the Mo 6+ ion is linked to three oxygen atoms in a strongly distorted octahedral environment. MoO 3 in thin film form is a potential candidate for sensing of ethanol, ammonia, oxygen, carbon monoxide and nitrogen oxide gases [1][2][3][4][5][6][7][8], solid state microbatteries [9,10], catalysis [11,12], electrochromic devices [13][14][15], solar cells [16][17][18] and light emitting diodes [19][20][21]. Physical properties of MoO 3 films depend mainly on the structure and surface morphology as well as an excess or deficient oxygen which controls the electrical * E-mail: srsuguru.phy@gmail.com and optical properties.…”