Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

Ishizu, Yuta; Tsuji, Kiyomi; Harada, Yukihiro; Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Masakazu; Izumi, H.

doi:10.1063/1.4919419

Cited by 12 publications

(10 citation statements)

References 32 publications

(64 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nevertheless, under excess of oxygen, as in Al 2 O 3 sample, the PLE band close to 5 eV is drastically quenched. Upon incorporation of a large oxygen amount, the density of V Al is likely decreased because of the coupling of excess oxygen to V Al and occupancy of the V Al sites by O atoms, as reported by Kita et al in the case of Gd-doped AlN. Hence, the density of V Al –2O N defect complex is reduced, and the energy-transfer path from this defect to the activator “Ce 3+ ” is blocked.…”

Section: Resultsmentioning

confidence: 81%

From Blue to White Luminescence in Cerium-Doped Aluminum Oxynitride: Electronic Structure and Local Chemistry Perspectives

et al. 2018

View full text Add to dashboard Cite

The excellent physical and chemical properties of aluminum oxynitride, Al(O)N, along with the tunable luminescence features of cerium ions (Ce) hold a promising future in white light sources based on chip technology. Manipulation of the light emission color from blue to green, to yellow and finally to white is demonstrated for the first time in Ce-doped Al(O)N thin films by tuning of the local structure, electronic structure and film thickness. Analysis of the electronic structure by electron energy loss spectroscopy (EELS) at the Ce-M4,5, Al-L2,3, O-K and N-K edges and photoluminescence spectroscopies highlight the essential role of oxygen and post-deposition annealing in changing the valence state of Ce ions from Ce 4+(optically inactive) to Ce 3+ (optically active) as well as the local field around Ce 3+ and, finally, in activating excitation pathways through generation of specific defect complexes in the oxynitride matrix.

show abstract

Section: Resultsmentioning

confidence: 81%

From Blue to White Luminescence in Cerium-Doped Aluminum Oxynitride: Electronic Structure and Local Chemistry Perspectives

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Figure 2 c demonstrates that the 2 θ value of (002) diffraction peak increases linearly with the increase in annealing temperature and annealing time. This result illustrates that the defects were repaired step by step within 1000 °C [ 17 , 18 , 19 , 20 ]. However, the (002) diffraction peak returns to a smaller value when annealing at 1000 °C for 80 min, which is due to the fact that some lattice defects were repaired at 1000 °C, but a higher annealing temperature or a longer holding time may generate new lattice defects.…”

Section: Resultsmentioning

confidence: 95%

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Dong

et al. 2021

Sensors

View full text Add to dashboard Cite

A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.

show abstract

“…Thus, the VAl-ON defect complexes act as donoracceptor pairsexcited by 325 nm light to its excited level (VAl-ON) 1-. 22,57 After relaxation, part of the absorbed energycan be emitted in the UV/Visible region 59 and part can be efficiently transferred to Yb 3+ ions emitting around 985 nm upon relaxation.…”

Section: Photoluminescence Excitation (Ple) and Excitation Mechanismsmentioning

confidence: 99%

“…18 Hence, it is well suited for applications in spintronic, 19 surface acoustic wave 20 and optoelectronic devices. 21 The optical activities of several lanthanide elementsincorporated in AlN, covering the light spectrumfrom UV (Gd), 22 blue (Ce, Eu, Tm), [23][24] green (Tb), 25 yellow (Dy), 26 red (Sm, Eu) 26 to IR (Nd), [27][28] have been investigated.Yet, Yb has been little considereddespite it holds some advantages.Yb 3+ is characterizedby a relatively simple electronic configuration compared to other RE 3+ . It is considered as two energy levels system consistingof two energy terms 2 F5/2 and 2 F7/2.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films

Giba

Pigeat

Bruyère

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

Yb 3+ ions hold promises for high power emission in the near infrared (NIR). Yet, relevant matrices, comprising mediators to excite Yb 3+ , have to be found and the optical mechanisms to be studied in details. This is the purpose of this study that reports on the optical excitation and emission mechanisms of NIRphotoluminescence (PL) of Yb-doped crystalline aluminum oxynitride thin films prepared at room temperature using reactive magnetron sputtering.Crystal structure and chemical composition are analyzed by transmission electron microscope (TEM) andRutherford backscattering spectrometry (RBS), respectively. Photoluminescence spectroscopies are used to investigate the excitation and emission mechanisms. NIR emission at 985 nm is obtained under indirect optical excitation using the 325 nm line of an He-Cd laser,the excitation mechanism is explored by photoluminescence excitation measurement (PLE) and the fine structure of the emitted energy levels is investigated by performing PL measurements at low temperature (LTPL). PLE shows that the host defects play the role of mediatorsto transfer the excitation energy to Yb ions. This offers different possibilities for the development of multiple excitation channels for Yb 3+ . Stark splitting of the energy levels of the 2 F5/2 and 2 F7/2transitions is evidenced using LTPL in the 78 to 295 K range.Electronic transitions are ascribed to experimental emission lines based ongood agreement with theoretical values. Moreover, the activation energies for PL thermal quenching are determined and correspond to the energy difference between highest energy quenched lines and thermally activated "hot lines".

show abstract

Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

Cited by 12 publications

References 32 publications

From Blue to White Luminescence in Cerium-Doped Aluminum Oxynitride: Electronic Structure and Local Chemistry Perspectives

From Blue to White Luminescence in Cerium-Doped Aluminum Oxynitride: Electronic Structure and Local Chemistry Perspectives

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films

Contact Info

Product

Resources

About