Thermal and radiation chemistry of butyltin oxo hydroxo: A model inorganic photoresist

Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters

“…The main path for the reduction in the C 1s intensity ratio is through the homolytic cleavage of the C−Sn bond, which leads to the loss of butyl ligands from the cluster. 18,28 Assuming that the observed reduction in the C 1s intensity correlates with the desorption of butyl ligands, we can apply an exponential photonstimulated desorption (PSD) model to fit the data. 48 For this analysis, the coverage of the radiation-sensitive ligand with respect to photon exposure time can be determined using eq 1…”

“…During the EUV photolithography process, the absorption of relatively high-energy EUV photons results in the emission of photo- and Auger electrons, which inelastically scatters and results in secondary electrons. Recent studies have indicated that low kinetic energy electrons are the active radiation species in EUV patterning and ultimately drive photoresist chemistries. − Electron-stimulated desorption studies have found that the interaction of low-energy electrons with butyltin hydroxide oxide hydrate resulted in desorption of the butyl ligand with fairly high cross sections, which is consistent with homolytic cleavage of the butyl-tin bond. , For organotin compounds, the EUV photosensitivity can be inversely correlated with the C–H bond dissociation energies for phenyl, butyl, and benzyl groups, where the C–H bond dissociation energies were used to approximate trends in the C–Sn bond dissociation energies. Higher EUV photosensitivities were obtained for weaker C–H bond dissociation energies, which suggests that the homolytic cleavage of the C–Sn bond occurs during EUV exposure for organotin photoresists.…”

“…26−29 Electron-stimulated desorption studies have found that the interaction of low-energy electrons with butyltin hydroxide oxide hydrate resulted in desorption of the butyl ligand with fairly high cross sections, which is consistent with homolytic cleavage of the butyl-tin bond. 18,28 For organotin compounds, the EUV photosensitivity can be inversely correlated with the C−H bond dissociation energies for phenyl, butyl, and benzyl groups, 23 where the C−H bond dissociation energies were used to approximate trends in the C−Sn bond dissociation energies. Higher EUV photosensitivities were obtained for weaker C−H bond dissociation energies, which suggests that the homolytic cleavage of the C−Sn bond occurs during EUV exposure for organotin photoresists.…”

Review of recent advances in inorganic photoresists

“…Herman et al studied the photo conversion mechanism of BuSnOOH under radiation. 37 According to programmed temperature desorption (TPD) results, the C-Sn bond in BnSnOOH was dissociated at 653 K. X-Ray (1486.6 eV) and electron beam (80 eV) could both initiate the detachment of surface organic ligands in the structure, thus inducing the formation of tin oxide structure, resulting in the difference of solubility in the lm.…”

Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA

“…6 In particular, the evaluation of these lithographic parameters is essential for the discovery of novel photoresists and optimization of their performance for application in EUV lithography. For instance, elucidation of the mechanism of the photon-resist interaction, 19 characterization of the chemical compound, 20 and conguration of molecular density of photoresists 21 are critical for directly improving the performance of electronic devices, such as MOSFETs 22 and FinFETs. 23 This paper reports a comprehensive study for evaluating the EUV lithographic performance of poly(methyl methacrylate) (PMMA) lms with correlative parameters.…”