The transparent conducting oxide, SnO2, is a promising optoelectronic material with predicted tailorable properties via pressure‐mediated band gap opening. While such electronic properties are typically modeled assuming perfect crystallinity, disordering of the O sublattice under pressure is qualitatively known. Here a quantitative approach is thus employed, combining extended X‐ray absorption fine‐structure (EXAFS) spectroscopy with X‐ray diffraction, to probe the extent of Sn—O bond anharmonicities in the high‐pressure cubic () SnO2 – formed as a single phase and annealed by CO2 laser heating to 2648 ± 41 K at 44.5 GPa. This combinational study reveals and quantifies a large degree of disordering in the O sublattice, while the Sn lattice remains ordered. Moreover, this study describes implementation of direct laser heating of non‐metallic samples by CO2 laser alongside EXAFS, and the high quality of data which may be achieved at high pressures in a diamond anvil cell when appropriate thermal annealing is applied.