2019
DOI: 10.1016/j.apradiso.2019.06.025
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Thermal and fast neutron detection through high-purity single-crystal CVD diamonds

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Cited by 8 publications
(4 citation statements)
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“…This high energy resolution comes from the high performance of both the diamond film and the electrode. The strip-patterned electrode differs from all other reported double-flat electrodes [12,17,[21][22][23][24][25][26]. Although this design increases the effective detection area of the detector and reduces the reaction between gold atoms and neutrons because the collision cross section between gold atoms and 14.1 MeV neutrons (5.295) is four times higher than that between diamond atoms and neutrons (1.329), this performance improvement is limited because the thickness of the electrode is of the order of 10 nm while the detector is 500 μm.…”
Section: Conclusion and Discussionmentioning
confidence: 60%
“…This high energy resolution comes from the high performance of both the diamond film and the electrode. The strip-patterned electrode differs from all other reported double-flat electrodes [12,17,[21][22][23][24][25][26]. Although this design increases the effective detection area of the detector and reduces the reaction between gold atoms and neutrons because the collision cross section between gold atoms and 14.1 MeV neutrons (5.295) is four times higher than that between diamond atoms and neutrons (1.329), this performance improvement is limited because the thickness of the electrode is of the order of 10 nm while the detector is 500 μm.…”
Section: Conclusion and Discussionmentioning
confidence: 60%
“…Уникальные электрофизические свойства алмаза, как полупроводника с шириной запрещенной зоны 5.45 eV [1]: высокие подвижности (до ∼ 4000 cm 2 /(V • s)) и скорость дрейфа (∼ 10 7 cm/s) носителей заряда [2], высокое поле электрического пробоя, рекордно высокая теплопроводность (до 24 (W/cm • K)), широкий температурный диапазон работы (до 700 • C), высокая радиационная стойкость [3][4][5], высокая (в некоторых условиях до 100%) эффективность сбора носителей заряда обеспечивают возможность создания радиационно-стойких детекторов ионизирующих излучений [6] и других высокозагруженных модулей алмазной электроники для применения в физике высоких энергий, в ряде отраслей, использующих ядерные технологии, в исследованиях термоядерной плазмы [7][8][9][10][11][12][13][14]. В конструкции детектора алмаз является твердотельной ионизационной камерой со сбором зарядов на электродах, располагаемых на двух сторонах алмазной пластины.…”
Section: Introductionunclassified
“…The unique electrophysical properties of diamond as a semiconductor with a bandgap of 5.45 eV [1] (high mobilities (up to ∼ 4000 cm 2 /(V • s)) and drift velocity (∼ 10 7 cm/s) of charge carriers [2], high dielectric breakdown field, record-high thermal conductivity (up to 24 (W/cm • K)), wide operating temperature range (up to 700 • C), high radiation resistance [3][4][5], and high (up to 100% under certain conditions) efficiency of carrier collection) provide an opportunity to design radiationhardened ionization radiation detectors [6] and other highload diamond electronic modules to be applied in highenergy physics, in certain branches of industry utilizing nuclear technology, and in research into thermonuclear plasma [7][8][9][10][11][12][13][14]. In a detector structure, diamond is a solidstate ionization chamber with charge collection at electrodes positioned on both sides of a diamond plate.…”
Section: Introductionmentioning
confidence: 99%