Thermal and Electronic Transport Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type ZnSb

Shaver, P. J.; Blair, J. M.

doi:10.1103/physrev.141.649

Cited by 78 publications

(75 citation statements)

References 20 publications

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“…The results agree with the anisotropic Hall mobility and the highest electrical conductivity is measured along the c-axis [15,45]. Anisotropic energy surface has also been observed by optical absorption indicating that the constant energy surface in k-space in ZnSb is a spheroid [59].…”

Section: Effective Mass and Density Of Statessupporting

confidence: 78%

“…The model has been successful for finding the optimum doping concentration of many thermoelectric materials [55][56][57]. When applied to Seebeck measurements on ZnSb with different doping concentrations, it has been observed that Pisarenko plot (the Seebeck coefficient vs. the charge carrier concentration) does not follow the SPB model with a single density of states effective mass m � , which was determined to be (0.42-0.49)×m 0 , where m 0 is free electron mass [15,53], but rather a different mass fit for different ranges of doping concentrations. A previous study by Böttger et al has suggested that deviations from idealized SPB behaviour could be induced by impurity band states [53].…”

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

“…Many observed a slow recovery to the initial values of the charge carrier concentration [15,20,44,45,47,61,77]. Andronik et al specifically attributed this change to Frenkel defects [77]: by Zn atoms leaving their lattice sites and becoming vacancy-interstitial pairs, V Zn -Zn I .…”

Section: Zn Vacancies and Intrinsic Defectsmentioning

confidence: 99%

“…Since ZnSb does not melt congruently, solidification will result in a mix of the phases, Zn 4 Sb 3 , ZnSb and Sb. This mix can be homogenized by sufficient heat treatments to reach the thermodynamic equilibrium state with a single uniform ZnSb phase [14,15]. Another problem with the solidification is that the sample contains cracks that significantly influence on the electron transport [13].…”

Section: Znsb Synthesis Techniquesmentioning

confidence: 99%

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Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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The thermoelectric material ZnSb has been studied intensively in recent years and has shown promising features. The other zinc-antimonide compound, Zn 4 Sb 3 has remarkable low thermal conductivity, but it is accompanied with phase transitions at moderate temperature and has inherent stability problems. Compared to that, ZnSb is relatively phase stable and has a relative high charge carrier mobility and Seebeck coefficient, thus yielding a decent power factor. Meanwhile, its thermal conductivity can be reduced by means of nanostructuring, thus giving a good figure of merit at moderate temperatures, 400-600K. Many researchers have dedicated their efforts to study and improve ZnSb properties, and the figure of merit has been reported to be above one. Still, ZnSb as a thermoelectric material has features and behaviours that are not well-understood. The behaviour and properties of its intrinsic defects are not understood, but have interested researchers in recent years. This chapter intends to offer a comprehensive review on ZnSb to the readers. By combining own experiences from research on thermoelectric materials, the authors address the prospect for improving the thermoelectric properties of ZnSb and the concerns of transferring lab results to manufacturing.

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Section: Effective Mass and Density Of Statessupporting

confidence: 78%

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

Section: Zn Vacancies and Intrinsic Defectsmentioning

confidence: 99%

Section: Znsb Synthesis Techniquesmentioning

confidence: 99%

See 2 more Smart Citations

Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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“…Only the properties of ZnSb and CdSb are well characterized. [3][4][5][6][7] Both compounds have narrow, indirect, band gaps and multi-valley conduction and valence bands. This characteristic results in a high thermoelectric power and -in conjunction with the orthorhombic symmetry -strongly anisotropic transport properties .…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and chemical bonding of the electron-poor II-V semiconductors ZnSb and ZnAs

2011

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The binary compounds ZnSb and ZnAs with the CdSb structure are semiconductors (II-V), although the average electron concentration (3.5 per atom) is lower than that of the tetrahedrally bonded III-V and II-VI archetype systems (4 per atom). We report a detailed electronic structure and chemical bonding analysis for ZnSb and ZnAs based on first principles calculations. ZnSb and ZnAs are compared to the zinc blende type semiconductors GaSb, ZnTe, GaAs, and ZnSe, as well as the more ionic, hypothetical, II-V systems MgSb and MgAs. We establish a clearly covalent bonding scenario for ZnSb and ZnAs where multicenter bonded structural entities (rhomboid rings Zn 2 Sb 2 and Zn 2 As 2 ) are connected to each other by classical two-center, twoelectron bonds. This bonding scenario is only compatible with a weak ionicity in II-V semiconductor systems and appears to be strongly coupled to the stability of the CdSb structure type. It is argued that a chemical bonding scenario with mixed multicenter and two-center bonding resembles that of boron and boron rich compounds, and is typical of electron poor spbonded semiconductors with average valence electron concentrations below 4 per atom.2

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Weak Bonding and Anharmonicity in Thermoelectric ZnSb

Grønbech,

Kasai,

Zhang

et al. 2024

Adv Funct Materials

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The Zn─Sb binary system contains two high‐performing thermoelectric materials, namely the ordered ZnSb and the disordered Zn13Sb10. Both systems exhibit low thermal conductivity, which is speculated to originate from multicentre bonding within Zn2Sb2‐rhombi. Here, the electron density of ZnSb is reported based on multipole modelling of accurate X‐ray diffraction data measured at 20 K. Topological analysis reveals that the bond paths in the rhombus are endocyclically strained and that electron density is concentrated within the rhombus rather than along its geometric bonds consistent with a multicentre bond description. However, the electron density is not equally shared between the geometric bonds of the rhombus. Electron density analysis and modelling of low‐temperature anharmonicity reveal that one Zn–Sb interaction is weaker than the other. Taken together with the orientation of bonds external to the rhombus structure, an alternative description emerges wherein the multicentre bond is more partially localised along one set of the opposite legs of the rhombus. In this description, the stronger bond can be considered a traditional 2‐centre‐2‐electron bond, while the weaker interaction is coordinative to the covalent bond. The anharmonicity and low thermal conductivity may consequently be understood as Zn rattling along the coordinative interaction.

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Thermal and Electronic Transport Properties ofp-Type ZnSb

Cited by 78 publications

References 20 publications

Review of Research on the Thermoelectric Material ZnSb

Review of Research on the Thermoelectric Material ZnSb

Electronic structure and chemical bonding of the electron-poor II-V semiconductors ZnSb and ZnAs

Weak Bonding and Anharmonicity in Thermoelectric ZnSb

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