Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques

Abstract

In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The electrical measurements have been done using network analyzer with infrared IR measurement technology. The results obtained on the basis of electrical measurements are compared with analytical and simulated results for the purpose of validation of our outcomes. The measured data shows a good agreement with analytical and simulated results, thereby validating our approach of AlGaN/GaN HEMT analysis.

Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT

“…The term dI TV represents the thermal change caused by dV DS , dV GS and dT 0 and has a major impact on v, excluding dV TH . A substitution of dI 0 = g M0 dV GS + g D0 dV DS and dI = dI E + dI T , as applied in (11), results in:…”

“…However, these methods, that are widely applied to determine average temperature of HEMT operating in the saturation regime, suffer from a lack of accuracy due to the marginalization of the drain current increase caused by, e.g., gate length modulation or leakage effects [8][9][10]. Moreover, the current comparison at the defined operating point to the peak current under short-pulsed operation at various ambient temperatures [11] in these devices does not account for time dependent isothermal phenomena caused processes such as by charge trapping.…”

Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

“…First term (R S ) in (1) reflects the average temperature in the source -gate area whereas second one (V T H ) in the active area under the gate and third one (dI L ) nearby the device surface. Actually g m is associated with the parameters in active and neutral area [17].…”

The world’s first high voltage GaN-on-Diamond power semiconductor devices

“…11 shows the apparent carrier density (N CV ) as extracted from the CV measurement data for this device [12]. The peak of apparent carrier concentration N CV = 2.3e19 cm -3 is observed at a depth of ~ 19 nm which also corresponds to the centroid of 2DEG at the AlGaN/GaN heterointerface.…”