Thermal Analysis Approach for Predicting Power Device Lifetime

Russo, S.; Bazzano, Gaetano; Cavallaro, Daniela; Sitta, Alessandro; Calabretta, Michele

doi:10.1109/tdmr.2019.2892185

Cited by 20 publications

(4 citation statements)

References 6 publications

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“…Coffin-Manson model is the most widely used approach among the empirical analytical modeling methods [85]. It describes the effect of the junction temperature fluctuation Δ𝑇 𝑗 .…”

Section: Empirical Modelsmentioning

confidence: 99%

An Overview of Lifetime Management of Power Electronic Converters

et al. 2022

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An expected lifetime of converters is of great importance for optimal decision-making in the planning of modern Power Electronic (PE) systems. Hence, the lifetime management of power electronic systems has attracted a lot of attention in academia and industry. This paper is a guideline for managing the lifetime of power converters. Analyzing the different kinds of failures, failure modes and their corresponding mechanisms are investigated in the first section along with the failure data needed as input parameters of the assessment. In the second section, lifetime prediction in two aspects of component-level and system level is discussed and all the possible techniques to achieve them are investigated and compared. All the steps required to predict the lifetime in the component-level including electrothermal modeling, cycle counting, lifetime model, damage accumulation, parameter estimation, and lifetime distribution are described and then system level methods consisting of reliability block diagrams, fault-tree analysis, and Markov chains are examined and compared. The last section contains the roadmap of the lifetime extension including the reliable design and condition monitoring. INDEX TERMSReliability, Lifetime management, Lifetime analysis, Lifetime prediction, Lifetime extension, Empirical model, Physics of failure, failure mechanism FIGURE 1. Guideline of the reliability of power electronic systems.

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“…Coffin-Manson model is the most widely used approach among the empirical analytical modeling methods [85]. It describes the effect of the junction temperature fluctuation Δ𝑇 𝑗 .…”

Section: Empirical Modelsmentioning

confidence: 99%

An Overview of Lifetime Management of Power Electronic Converters

et al. 2022

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“…The average value of variables in a switching period is used to replace the instantaneous value, so that the circuit equations of different working modes are unified into one equation and the circuit is transformed from a nonlinear equation into a linear equation. For example, the state space equations of the two operating modes of the switching power converter are shown in (6).…”

Section: Acquisition Of Component-level Parameters (1) Direct Extractionmentioning

confidence: 99%

Review of parametric fault prediction methods for power electronic circuits

Fan¹,

Yuan²

2021

Eng. Res. Express

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Power electronic circuits are widely used in rail transit, new energy power generation, aerospace and other fields. Therefore, stable and safe operation of power electronic circuits have a great impact on the reliability of the entire electrical system. Failures of majority of the power electronic circuits are not caused by sudden breakdown, but gradually degenerate in the process of operation until their functions are completely lost. It is necessary to carry out accurate health assessment and fault prediction for power electronic circuits. According to different research objects, fault prediction methods of power electronic circuits are divided into two categories: component-level fault prediction methods and circuit-level fault prediction methods. For each type of method, the specific principle and workflow are described in detail, and its advantages and disadvantages are analyzed. Finally, the research difficulties and the future development directions of fault prediction methods for power electronic circuits are pointed out.

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“…Wafer warpage caused by thick Cu layer is mostly due to plastic deformation during the annealing [13], which is a thermal process aimed to make softer Cu material, increasing and then stabilizing the Cu grains dimension. Stabilizing metal grain size, annealing permits to avoid electromigration issues in interconnect reliability, e.g., during reliability application related test [14][15][16][17] or passive thermal cycles [18,19]. It seems to miss in literature a detailed experimental warpage analysis for thick Cu layer: available data refer about maximum 5 µm thick Cu metal [3,20].…”

Section: Introductionmentioning

confidence: 99%

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

et al. 2021

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Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional materials, such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (20 μm) copper layer. Warpage is experimentally characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. Physical analysis is employed to correlated the macroscopic warpage behavior with microstructure modification. A linear Finite Element Model (FEM) is developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

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Thermal Analysis Approach for Predicting Power Device Lifetime

Cited by 20 publications

References 6 publications

An Overview of Lifetime Management of Power Electronic Converters

An Overview of Lifetime Management of Power Electronic Converters

Review of parametric fault prediction methods for power electronic circuits

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

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