Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm,Tb,Dy,Eu,Sm,Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Weingärtner, Roland; Erlenbach, Oliver; Winnacker, A.; Welte, Andrea; Brauer, I.; Mendel, H.; Strunk, H. P.; Ribeiro, C. T. M.; Zanatta, A. R.

doi:10.1016/j.optmat.2005.09.024

Cited by 52 publications

(24 citation statements)

References 8 publications

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“…Incorporation of Yb into ceramic-based (YAG [11,12,13], Y 2 SiO 5 (YSO) [14,15,16], KY(WO 4 ) 2 [17], NaLu(WO 4 ) 2 [18], and Al 2 O 3 [19,20]) wide bandgap semiconductors, oxide-based semiconductors (ZnO [21,22,23], TiO 2 [24,25], In 2 O 3 [26]), III–V group based materials (AlN [27]), and Si-based [28] thin film hosts using various deposition techniques, have been shown to produce luminescence at a wavelength of around 1 μm. For Yb doped YAG [11], YSO [14,15], and KY(WO 4 ) 2 [17] thin films, the liquid phase epitaxial (LPE) method has been employed to fabricate homogeneous crystalline films from a molten solute diluted in a solvent.…”

Section: Introductionmentioning

confidence: 99%

“…, YAG [13], Y 2 O 3 [30], Al 2 O 3 [19,20], CoSb 3 [31], ZnO [23], ITO [32], AlN [27], and Si-based [28] hosts) and crystalline Yb 2 O 3 film [33] on Si-based and/or sapphire substrates was achieved via pulsed laser ablation (PLD) [13,19,20,28,30,31,33] and magnetron sputtering [23,27,32] of Yb containing targets. While it is highly desirable to directly employ Si as the host in optoelectronic devices, the bulk crystalline Si bandgap energy is not large enough to activate Yb luminescence.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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Abstract:In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb 3+ ions from the selected Yb(fod) 3 metal-organic compound. The partially fluorinated Yb(fod) 3 compound assists the suppression of photoluminescence quenching by substitution of C-H with C-F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. OPEN ACCESSMaterials 2014, 7 5644Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb 3+ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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“…In other respects, nitrides of the III-V semiconductor family have recently received widespread attention as electronic material for various applications in photonics [3,4]. When nano-structured, it appears the wide band gap material AlN (6.2 eV in the ground state) can be an adequate host matrix for lanthanides to increase their photoluminescence [5][6][7][8][9][10]. Although the mechanisms of this phenomenon are not yet fully understood, the authors agree that the presence of oxygen atoms seems to play a crucial role [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Correlation between the oxygen content and the morphology of AlN films grown by r.f. magnetron sputtering

Brien

Pigeat

2008

Journal of Crystal Growth

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a b s t r a c tTo understand the influence of the oxygen on the crystallography of AlN thin films made by physical vapour deposition r.f. magnetron, three different oxygen content AlN films were prepared at room temperature for two values of the energy of the species building the film (low energy obtained by using: low power W, high pressure P; high energy obtained by using: high W, low P). It is observed that the crystalline morphology of the films not only depends on the process parameters (W and P), but is also particularly related to the oxygen content in the films. Regardless of P and W used here, low oxygen content films (5 at%) are columnar. The increase in oxygen content (15-30 at%) reduces the grain size without creating phases like Al 2 O 3 or AlNO, and very rich oxygen films (50 at%) are amorphous. From this study, assumptions are made for the localization of oxygen atoms in the AlN phase.

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“…BN‐based phosphors have been proposed for use in extreme environments such as high temperatures and high radiation levels 8 . Tm‐, Tb‐, Sm‐, Eu‐, or Yb‐doped AlN films have been produced using reactive radiofrequency sputtering and show strong photoluminescence and cathodoluminescence 9 . Eu 2+ ‐doped AlN shows stronger blue cathodoluminescence than the Ce 3+ :Y 2 SiO 5 blue phosphor normally used in field‐emission displays 10 .…”

Section: Introductionmentioning

confidence: 99%

Nonoxide Sol–Gel Synthesis of Terbium‐Doped Silicon Nitride Phosphors

Hassan

Carravetta

Hector

et al. 2010

Journal of the American Ceramic Society

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Exposure of solutions of Tb(N(SiMe 3 ) 2 ) 3 with SiCl(NEt 2 ) 3 in THF to dry ammonia results in polymeric xerogels. Heating these gels in ammonia leads to amorphous Tb:SiN x phosphors that exhibit bright green luminescence under UV irradiation. MAS-NMR and combustion analysis show the phosphors to be silicon nitride materials analogous to those typically produced by solgel routes. Photoluminescence behavior is similar to that of Tb:SiN x or Tb:SiO 2 films produced by ion implantation that show good electroluminescence activity.

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Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm,Tb,Dy,Eu,Sm,Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Cited by 52 publications

References 8 publications

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Correlation between the oxygen content and the morphology of AlN films grown by r.f. magnetron sputtering

Nonoxide Sol–Gel Synthesis of Terbium‐Doped Silicon Nitride Phosphors

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