TheP-T-x phase diagram of PbTe and PbSe

Abstract

Pressure-temperature-composition (P-T-x) phase diagrams have been calculated for PbTe and PbSe in the temperature range 250~ to the melting point. Various thermodynamic quantities have been estimated which are consistent with electrical parameters measured at room temperature. However, refinements in the band structure and its temperature dependence are needed before an accurate calculation of intrinsic carrier concentration at high temperatures becomes possible.

A comparison of phase equilibria in some II-IV-VI compounds based on PbTe

“…For an alloy containing 1 mol % ZnTe, CdTe, or MgTe, the phase widths on the n-side at 800~ increase in the order MgTe-CdTe-ZnTe. However, on the p-side they are similar but are all smaller than that of lead telluride [10,13].…”

“…Studies of the phase widths of PbTe [9-13] PbSe [13][14][15][16] and PbS [17] have been reported in some detail. However, more recently the properties of ternary alloys based on one or other of the lead chalcogenides have received increasing attention.…”

Ab initio study of intrinsic point defects in PbTe: an insight into phase stability

“…The lead chalcogenide salt PbTe, one of the most widely studied TE material, is a IV-VI semiconductor with a small band-gap and is the best performing TE material for mid-temperature power generation (200-600 0 C) [1]. It exhibits both types of conductivity depending on the growth conditions-n-type (electrons) in a Pb-rich environment and p-type (holes) in a Te-rich environment [2,3,4,5,7,8,6], which makes it particularly advantageous since TE devices consist of both n-and p-type legs coupled together. Furthermore, tuning the carrier densities by adjusting the defect/dopant concentrations not only maximizes zT , but also gives control over where its peak occurs in the temperature space [1].…”

“…The phase diagram of Pb-Te exhibits a very small range of non-stoichiometry in the PbTe phase to the order of x = 10 −4 on both sides of the stoichiometric line at x = 0.50 [2,3,4,5,7,8,6] due to the presence of defects, that in turn leads to the n-and p-type conductivity in this phase.…”

Electrochemical Investigation of Hydrogen Influence on GaSe–PbSe System

“…PbSe має кубічну гранецентровану гратку та не володіє поліморфізмом. Температура плавлення селеніду галію становить 960 ºС, а селеніду свинцю -1080 ºС [13,14].…”