Theory of the lattice thermal conductivity in bulk and films of GaN

AlShaikhi, Abdullah A.; Barman, Saswati; Srivastava, G. P.

doi:10.1103/physrevb.81.195320

Cited by 53 publications

(32 citation statements)

References 35 publications

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“…Some debate exists on the importance of isotope scattering in gallium-based semiconductors, though authors agree that it is diminished at high temperatures31383940. The collapse of GaAs and GaN data to k universal indicates that isotope scattering did not strongly affect the τ −1 ∝ ω 2 scattering of long MFP phonons probed by BB-FDTR.…”

Section: Discussionmentioning

confidence: 99%

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Freedman

Leach

Preble

et al. 2013

Sci Rep

136

113

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Thermal conductivity in non-metallic crystalline materials results from cumulative contributions of phonons that have a broad range of mean free paths. Here we use high frequency surface temperature modulation that generates non-diffusive phonon transport to probe the phonon mean free path spectra of GaAs, GaN, AlN, and 4H-SiC at temperatures near 80 K, 150 K, 300 K, and 400 K. We find that phonons with MFPs greater than 230 ± 120 nm, 1000 ± 200 nm, 2500 ± 800 nm, and 4200 ± 850 nm contribute 50% of the bulk thermal conductivity of GaAs, GaN, AlN, and 4H-SiC near room temperature. By non-dimensionalizing the data based on Umklapp scattering rates of phonons, we identified a universal phonon mean free path spectrum in small unit cell crystalline semiconductors at high temperature.

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Section: Discussionmentioning

confidence: 99%

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Freedman

Leach

Preble

et al. 2013

Sci Rep

136

113

View full text Add to dashboard Cite

show abstract

“…The Callaway model, with some approximations, has been successfully used to fit thermal conductivity data for various GaN samples. 6,19,30,31,41 However, the extracted values for the scattering rate coefficients, which in principle only depend on the material parameters, are quite different.…”

Section: Resultsmentioning

confidence: 99%

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

et al. 2017

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The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE) with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3) was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

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“…Zou [16] and Zhou and Li [17] applied the Boltzmann transport equation approach to calculate the thermal conductivity of GaN nanowires and GaN nanotubes, respectively. The Callaway's relaxation-time theory was also utilized to simu late the thermal conductivity of bulk and films of GaN through taking into account different phonon scattering mechanisms [18]. Besides of the continuum models, the atomic methods are also performed to calculate the thermal conductivity of GaN bulks as well as GaN nanostructures [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…The Callaway's relaxation-time theory was also utilized to simu late the thermal conductivity of bulk and films of GaN through taking into account different phonon scattering mechanisms [18]. Besides of the continuum models, the atomic methods are also performed to calculate the thermal conductivity of GaN bulks as well as GaN nanostructures [18][19][20]. However, it is needed to point out that these experimental and theoretical studies have not accounted for the influence of the stress fields on the thermal con ductivity of GaN nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures

Zhu

Ruan

2014

Journal of Heat Transfer

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In flu en ce of Prestress Fields on the Phonon T h erm al C onductivity of GaN N anostructuresThe phonon thermal conductivity of Gallium nitride (GaN) nanofilms and nanowires under prestress fields are investigated theoretically. In the framework of elasticity theory, the phonon dispersion relations of spatially confined GaN nanostructures are achieved for different phonon modes. The acoustoelastic effects stemmed from the preexisting stresses are taken into account in simulating the phonon properties and thermal conduc tivity. Our theoretical results show that the prestress fields can alter the phonon proper ties such as the phonon dispersion relation and phonon group velocity dramatically, leading to the change of thermal conductivity in GaN nanostructures. The phonon ther mal conductivity is able to be enhanced or reduced through controlling the directions of prestress fields operated on the GaN nanofilms and nanowires. In addition, the tempera ture and size-dependence of thermal conductivity of GaN nanostructures will be sensitive to the direction and strength o f those prestress fields. This work will be helpful in control ling the phonon thermal conductivity based on the strain!stress engineering in GaN nanostructures-based electronic devices and systems.J o u rn a l o f H e a t T ra n s fe r C o p y r ig h t © 2 0 1 4 b y A S M E

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Theory of the lattice thermal conductivity in bulk and films of GaN

Cited by 53 publications

References 35 publications

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures

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