Theory of steady-state plane tunneling-assisted impact ionization waves

Kyuregyan, A. S.

doi:10.1134/s1063782613070142

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…9) in qualitative terms. Some excess of the expected relations over observable E M /E 0 is due to the fact that the front of the streamer has a finite thickness δ, and the ratio of δ/R increases with E 0 [35].…”

Section: Resultsmentioning

confidence: 96%

“…In practical terms, this is due to the fact that multistreamer breakdown mechanism determines (at least in some regimes) [24,25] the operation of avalanche voltage sharpeners, which are commutators with unique characteristics [26,27], but in the scientific terms this is due to features microscopic processes in semiconductors. Among them there are particularly important ones -saturation of dependencies v e,h (E) in relatively very low fields E ∼ E s ∼ 10 kV/cm, which, in particular, leads to a significant (relative to gas), increasing the ratio u n /v e,h even within the framework of the "minimal model" of streamers [28,29] and -existence of tunneling ionization, which can also increase the ratio of u n /v e,h by orders of magnitude [11,[30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

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Interaction of streamers and stationary corrugated ionization waves in semiconductors

Kyuregyan

2014

Phys. Rev. E

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A numerical simulation of evolution of an identical interacting streamers array in semiconductors has been performed using the diffusion-drift approximation and taking into account the impact and tunnel ionization. It has been assumed that the external electric field E0 is static and uniform, the background electrons and holes are absent, the initial avalanches start simultaneously from the nodes of the plane hexagonal lattice, which is perpendicular to the external field, however the avalanches and streamers are axially symmetric within a cylinder of radius R. It has been shown that under certain conditions, the interaction between the streamers leads finally either to the formation of two types of stationary ionization waves with corrugated front or to a stationary plane ionization wave. A diagram of different steady states of this type waves in the plane of parameter E0, R has been presented and a qualitative explanation of the plane partition into four different regions has been given. Characteristics of corrugated waves have been studied in detail and discussed in the region of R and E0 large values, in which the maximum field strength at the front is large enough for the tunnel ionization implementation. It has been shown that corrugated waves ionize semiconductor more efficiently than flat ones, especially in relatively weak external fields.

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Interaction of streamers and stationary corrugated ionization waves in semiconductors

Kyuregyan

2014

Phys. Rev. E

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“…Tunneling via deep levels helps to create an initial carrier concentration for impact ionization, and it is important that it requires a lower value of the electric field strength than band-to-band tunneling. The fieldenhanced ionization phenomenon is described in more detail in [23][24][25][26][27]. Fast delivery of charge carriers to deep levels is provided by optical illumination with a wavelength of 1068 nm: the optical transition via the deep center occurs instantaneously [28,29], since the ions change their position relative to the equilibrium state much more slowly than the electronic state of the center changes.…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50-1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30-40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm −2 , and the energy absorbed in the p-GaAs base during the control pulse was 43-47 pJ.

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Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: From subnano to picosecond range

Rodin

Иванов

2020

Journal of Applied Physics

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The effect of delayed impact ionization breakdown initiated in high-voltage Si or GaAs p+nn+ diode by a steep voltage ramp leads to 100 ps avalanche transient from blocking to conducting state. Here, we demonstrate that qualitatively different inner mechanisms—or spatiotemporal modes—can be responsible for superfast high-voltage avalanche switching. The well-known mechanism based on TRApped Plasma Avalanche Triggered Transit (TRAPATT)-like ionizing front passage is compared with three novel spatiotemporal switching scenarios. The first of these novel modes corresponds to a new type of ionizing front travelling across the structure faster than the saturated drift velocity. Another corresponds to the quasiuniform avalanche breakdown of the whole n base. The last one—the “back-stroke” mode—takes place when switching occurs only in the part of the device cross section. For these novel modes, the calculated switching time (tens of picoseconds) is several times smaller than for well-known TRAPATT-like front (∼100 ps). We analyze all four spatiotemporal modes in their connection with the device structural parameters. By means of numerical simulations, we demonstrate that varying only one parameter of a p+nn+ structure—the n base dopant concentration—it is possible to completely change the inner dynamics. Our analysis reveals that subnanosecond—100 ps or less—switching time may be determined either by the ionizing front passage time or by the internal “discharge” time of the device via generated electron–hole plasma.

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Theory of steady-state plane tunneling-assisted impact ionization waves

Cited by 4 publications

References 17 publications

Interaction of streamers and stationary corrugated ionization waves in semiconductors

Interaction of streamers and stationary corrugated ionization waves in semiconductors

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: From subnano to picosecond range

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