Theory of stationary impact-ionization plane waves in semiconductors

Kyuregyan, A. S.

doi:10.1134/s1063782607060243

Cited by 12 publications

(12 citation statements)

References 4 publications

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“…The best known traveling front mode of avalanche breakdown is a TRAPATT-like ͑for TRApped Plasma Avalanche Triggered Transit͒ front in a reversely biased p + -n-n + structure: a narrow zone of impact ionization that runs across the n base filling it with dense electron-hole plasma. 3,10,11 The velocity v f is controlled by the impact ionization zone width…”

Section: Introductionmentioning

confidence: 99%

Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization

Rodin

Minarsky

Grekhov

2010

Journal of Applied Physics

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We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si p + -n-n + structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted n base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in opposite directions with velocities up to 10 times higher than the saturated drift velocity.

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Section: Introductionmentioning

confidence: 99%

Impact ionization fronts in semiconductors: Numerical evidence of superfast propagation due to nonlocalized preionization

Rodin

Minarsky

Grekhov

2010

Journal of Applied Physics

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“…Therefore, an analytical description is only possible if they are highly symmetric objects that possess the property of self-similarity. Among these, stationary plane IW are the simplest, and some rigorous results have been obtained for such waves [1][2][3]. However, most of the IW that have been studied experimentally or by numerical simulation are neither stationary, nor plane waves.…”

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confidence: 97%

“…(3) and (4), but a sharp exponential dependence AðFÞ should be allowed. For this case, the solution to (3) and (4) was obtained in [3]; with VðFÞ ¼ F this solution takes the form…”

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confidence: 99%

Asymptotically Self-Similar Propagation of Spherical Ionization Waves

Kyuregyan

2008

Phys. Rev. Lett.

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It is shown that a new type of self-similar spherical ionization waves may exist in gases. All the spatial scales and the propagation velocity of such waves increase exponentially with time. The conditions for existence of these waves are established, their structure is described, and approximate analytical relationships between the principal parameters are obtained. It is notable that spherical ionization waves can serve as the simplest, but structurally complete and physically transparent model of a streamer in a homogeneous electric field.

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“…In this case, the thick ness of the front is large so that the diffusion of elec trons and holes can be neglected. The corresponding estimates were given in [15]. The distributions of elec trons, n(t, r), and holes, p(t, r), satisfy the system of continuity equations; under the above assumptions, it is convenient to represent these equations in the form…”

Section: Formulation Of the Problemmentioning

confidence: 99%

“…In this case, the plane impact ionization wave is stable with respect to transverse perturbations with wavenumbers smaller than a certain critical value k 00 ≈ L ⎯1 [12]. In the particular case where 1 It should be calculated using the theory of steady state plane impact ionization waves in gases [3,13] (at N = 0) or semicon ductors [14,15].…”

Section: Introductionmentioning

confidence: 99%