Abstract:The response of two-dimensional electron gas to temperature gradient in perpendicular magnetic field under steady-state microwave irradiation is studied theoretically. The electric currents induced by temperature gradient and the thermopower coefficients are calculated taking into account both diffusive and phonon-drag mechanisms. The modification of thermopower by microwaves takes place because of Landau quantization of electron energy spectrum and is governed by the microscopic mechanisms which are similar t… Show more
“…Under MW irradiation the dissipative resistivity ρ xx is strongly modified while the Hall one, ρ xy , remains unchanged. The coefficients β yy and β xy are not modified by microwaves as strongly as ρ xx [24]. Thus, the terms in α xy no longer compensate each other, and the voltage developing in the direction perpendicular to the phonon flux should have an oscillating component proportional to the MW-induced part of dissipative resistivity.…”
mentioning
confidence: 99%
“…The ballistic phonon model is reliable because of large (1 mm) mean free path lengths of phonons in GaAs at low T [26]. Using the basic formalism for calculation of thermoelectric response in quantizing magnetic field [24] in application to this model [25], one may represent the PDV between the contacts i and j in the form…”
We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.
“…Under MW irradiation the dissipative resistivity ρ xx is strongly modified while the Hall one, ρ xy , remains unchanged. The coefficients β yy and β xy are not modified by microwaves as strongly as ρ xx [24]. Thus, the terms in α xy no longer compensate each other, and the voltage developing in the direction perpendicular to the phonon flux should have an oscillating component proportional to the MW-induced part of dissipative resistivity.…”
mentioning
confidence: 99%
“…The ballistic phonon model is reliable because of large (1 mm) mean free path lengths of phonons in GaAs at low T [26]. Using the basic formalism for calculation of thermoelectric response in quantizing magnetic field [24] in application to this model [25], one may represent the PDV between the contacts i and j in the form…”
We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.
“…The thermoinduced current in GaAs quantum wells is dominated by phonon drag contribution. In general, this current is modified in the presence of microwave irradiation [25], but the effect is small compared to the influence of microwaves on the resistivity and will be neglected in the following. Using the model of bulk phonons with a three-dimensional wave vector Q = (q, q z ) and taking into account that the scattering of electrons by phonons is quasi-elastic because of the smallness of the phonon energies compared to Fermi energy, one gets [25]…”
Section: Theory and Discussionmentioning
confidence: 99%
“…The function C λQ is the squared matrix element of the electron-phonon interaction in the bulk, comprising deformation-potential and piezoelectric-potential mechanisms (the detailed expression can be found, for example, in Ref. 25). The squared overlap integral I qz is defined as I qz = | dze iqz z F 2 (z)| 2 , where F (z) is the ground-state wavefunction describing confinement of electrons in the quantum well.…”
Section: Theory and Discussionmentioning
confidence: 99%
“…In this case,B is the thermoelectric tensorβ; see Ref. 25 for the theory of phonon-drag thermoelectric effect in a quantizing magnetic field. Both B d and B H contain classical (nonoscillating) and quantum (oscillating with B) contributions, the latter include the magnetophonon oscillations.…”
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance oscillations at high magnetic fields, caused by the oscillations of thermodynamic density of states, are not essentially modified by microwaves. However, in the region of fields below 1 Tesla, we observe another set of oscillation, with the period and the phase identical to those of microwave induced resistance oscillations. The phenomenon of microwave induced capacitance oscillations is explained in terms of violation of the Einstein relation between conductivity and the diffusion coefficient in the presence of microwaves, which leads to a dependence of the capacitor charging on the anomalous conductivity. We also observe microwaveinduced oscillations in the capacitive response to periodic variations of external heating. These oscillations appear due to the thermoelectric effect and are in antiphase with microwave induced resistance oscillations because of the Corbino-like geometry of our experimental setup.
In addition to the photo-excited zero-resistance states and radiation-induced magnetoresistance oscillations, which can be observed in the high-quality GaAs/AlGaAs two-dimensional electron system (2DES), magnetotransport studies of this 2DES also exhibit interesting dark magnetoresistance effects. Here, a narrow negative magnetoresistance (MR) effect that appears around zero field, and spans over about À0.02 T B 0.02 T is examined. This experimental work aims to study the influence of microwave (MW) photoexcitation on this narrow negative-MR effect in high-mobility GaAs/AlGaAs 2DES. Experimental data exhibit that the observed negative magnetoresistance effect disappears with increasing MW power. For example, the change in magnetoresistance (ΔR xx ) due to the narrow negative-MR effect drops by %50% upon increasing the source power up to about 8 mW. Further analysis shows that the zero-field resistance monotonically increases with increasing the power, suggesting that electron heating due to the energy absorbed from the radiation field accounts for the observed quenching of the narrow negative-MR effect.
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