Theory of life time measurements with the scanning electron microscope: Steady state

Berz, F.; Kuiken, HK Hendrik

doi:10.1016/0038-1101(76)90003-4

Cited by 219 publications

(80 citation statements)

References 7 publications

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“…Unfortunately, a full three-dimensional calculation of.1 p(r,z) from a realistic g(r,z) has not been performed. Several workers (Breeze 1971;Berz and Kuiken 1976;Donolato 1978) have computed.1 p(r,z) for the simplified case of a spherically shaped region of uniform generation rate. An example of the distribution of excess carriers obtained is shown in Fig.…”

Section: Eehqmentioning

confidence: 99%

Charge collection scanning electron microscopy

Leamy¹

1982

Journal of Applied Physics

767

320

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A novel apparatus for in situ compression of submicron structures and particles in a high resolution SEM Rev. Sci. Instrum. 83, 095105 (2012) Foucault imaging by using non-dedicated transmission electron microscope Appl. Phys. Lett. 101, 093101 (2012) New Products Rev. Sci. Instrum. 83, 079501 (2012) Towards secondary ion mass spectrometry on the helium ion microscope: An experimental and simulation based feasibility study with He+ and Ne+ bombardment This review encompasses the application of the scanning electron microscope to the study and characterization of semiconductor materials and devices by the Electron Beam Induced Conductivity (EBIC) method. In this technique, the charge carriers generated by the electron beam of the microscope are collected by an electric field within the material and sensed as a current in an external circuit. When employed as the video signal of the SEM, this collected current image reveals inhomogeneities in the electrical properties of the material. The technique has been used to determine carrier lifetime, diffusion length, defect energy levels, and surface recombination velocities. Charge collection images reveal the location of p-n junctions, recombination sites such as dislocations and precipitates, and the presence of doping level inhomogeneities. Both the theoretical foundation and the practical aspects of these effects are discussed in a tutorial fashion in this review. PACS numbers: 07.80. + x, 61.16.Di, 72.20. -i GLOSSARY OF SYMBOLS C = ill II = image contrast. {j = SrlL = recombination velocity -;-diffusion velocity. D, De' Dh = Diffusion coefficient (D) for electrons (De), and for holes (D h ) (cm2/sec). E = electron beam energy (eV). Eeh = carrier pair creation energy (eV). E bg = band-gap energy (eV). ET = carrier trap energy level (eV). S = electric field strength (V Icm). E = dielectric constant. f = energy fraction of the incident electron beam that is reflected from the sample surface. g = carrier pair generation rate (cm -3).I = electric current (amps). Ib = SEM electron beam current (amps). Ig = IbE(1 -f)IEeh = maximum beam generated current (amps). Icc = collected current (short circuit current) (amps). Is = saturation current of a p-n junction (amps). J e , J h = electron (J e ) or hole (J h ) flux (cm-2 sec-I ). k = Boltzmann's constant = 1.38 X 10-23 I/'K. Leo L h = diffusion length for electrons (L e) and holes (L h ) (cm). m = mass (gms). n = equilibrium electron density (cm -3). iln = excess electron density (cm-3 ). NT = carrier trap density (cm-3 ). NB = net ionized impurity density (cm-3 ). p = equilibrium hole density (cm -3). ilp = excess hole density (cm -3). q = electronic charge = 1.6 X 10-19 C. R = recombination rate (sec-I).R e = electron range (cm). p = density (gm/cm 3 ). S = surface recombination velocity (cm/sec). l: = charge collection efficiency. 0', U e , Uh = capture cross section (0') for electrons (u e ) and holes (u h ) (cm 2 ). T = temperature (OK). T, T e , Th = lifetime (T) for electrons (Te) and for holes (T h ) (sec). T...

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Section: Eehqmentioning

confidence: 99%

Charge collection scanning electron microscopy

Leamy¹

1982

Journal of Applied Physics

767

320

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“…Measurement of electron beam induced current (EBIC) has been widely used to study correlations between electronic properties and structural defects in semiconductors [1][2][3][4][5][6]. Electron-hole pairs (ehps) generated within the interaction volume of the sample by incident electrons can be separated by an internal electric field such as within a p-n junction or a Schottky contact, resulting in a reverse current.…”

Section: Introductionmentioning

confidence: 99%

Direct measurement of electron beam induced currents in p-type silicon

Han

Zhu

Sasaki

et al. 2010

Solid-State Electronics

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“…Since then the matter remained dormant for about two decades before interest in this problem area was renewed. As a result numerous papers, [3,4,5,6,7] to name a few, have been published, while a recent survey may be found in [8]. In retrospect it is clear that the successful use of the configuration of Fig.…”

Section: Introductionmentioning

confidence: 99%

A diffusion problem in semiconductor technology

1984

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This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion length of semiconductor materials. In the model the semiconductor material occupies a half-space, of which the plane bounding surface is partly covered by a semi-infinite current-collecting junction, the Schottky diode. A scanning electron microscope (SEM) is used to inject minority carriers into the material. It is assumed that injection occurs at a single point only. The injected minority carriers diffuse through the material and recombine in the bulk at a rate proportional to their local concentration. Recombination also occurs at the free surface of the material, not covered by the junction, where its rate is determined by the surface recombination velocity v. The mathematical model gives rise to a mixed-boundary-value problem for the diffusion equation, which is solved by means of the Wiener-Hopf technique. An analytical expression is derived for the measurable electron-beam-induced current (EBIC) caused by the minority carriers reaching the junction. The solution obtained is valid for all values of v, and special attention is given to the limiting cases v = o0 and v = 0. Asymptotic expansions of the induced current, which are usable when the injection point is more than a few diffusion lengths away from the edge of the junction, are derived as well.

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Theory of life time measurements with the scanning electron microscope: Steady state

Cited by 219 publications

References 7 publications

Charge collection scanning electron microscopy

Charge collection scanning electron microscopy

Direct measurement of electron beam induced currents in p-type silicon

A diffusion problem in semiconductor technology

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