Theory of Isotopic Effects in the Electron-Phonon Interaction

Matthew, J.A.D.; Hart-Davis, A. J.

doi:10.1103/physrev.168.936

Cited by 10 publications

(1 citation statement)

References 23 publications

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“…According to the single effective frequency model, the position of the F band is found 17 to vary as Ep(T) = A+B coth (nwe/2k T) (8) where A and B are fitting parameters. According to the single effective frequency model, the position of the F band is found 17 to vary as Ep(T) = A+B coth (nwe/2k T) (8) where A and B are fitting parameters.…”

Section: Is Worth Mentioning Since At Very Low Temperatures H(t)~h(omentioning

confidence: 99%

U Band in Cesium Halides

Singh

Mitra

Tanton

et al. 1972

The Journal of Chemical Physics

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The U band shape in CsCl, arising from the first singlet to singlet electronic transition of substitutional H-and D-impurities replacing the anions, has been measured in the temperature range of 8-300 o K. At 8.4°K, the absorption peak and half width for the H-center were found to be S.42S±O.OOS and O.24±O.OOS eV, respectively; while those for the D-center were S.44D±O.OOS and O.21±O.OOS eV, respectively. Along with the previously obtained data for CsBr and CsI, the U band peak position was found to follow Mollwo-Ivey relation having the exponent of the near-neighbor distance of -1.54. The U band shape in CsCI has been analyzed by the method of moments. The temperature dependence of the half-width can be explained by means of an effective phonon frequency. The single effective phonon frequencies of the U band in CsCltype crystals were compared with the weighted mean phonon frequencies of the host crystals obtained from a recent lattice-dynamical calculation. Little correlation was noted.

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