Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers

Gomatam, Badri N.; DeFonzo, Alfred P.

doi:10.1109/3.60884

Cited by 110 publications

(27 citation statements)

References 25 publications

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“…Early experiments indicated that strong nonlinearities on sub picosecond timescales in bulk and multiquantum-well (MQW) SOAs can take place [30]- [34]. These nonlinearities were soon identified to be related with nonequilibrium changes in the carrier energy distribution [31], [35]. The main nonlinear processes responsible for these nonequilibrium changes were identified to be spectral hole burning, carrier heating and TPA [36]- [38].…”

mentioning

confidence: 99%

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

Dorren

Yang

Mishra

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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Abstract-We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical amplifier (SOA) in the context of ultrafast all-optical logic. A rate-equation model is presented that accounts for two-photon absorption, free-carrier absorption, self-and cross phase modulation, carrier heating, spectral, spatial hole burning, and self-and cross polarization modulation. The nonlinear refractive index dynamics is investigated theoretically and experimentally. We find nonlinear phase changes larger than radians, which recovers on a timescale in the order of 1 ps. We also investigate a nonlinear AND gate that consists of an SOA that is placed in an asymmetric Mach-Zehnder interferometer. We show that the gate can be operated using 800-fJ optical pulses with duration of 200 fs while having a contrast ratio larger than 11 dB.Index Terms-Optical logic, optical signal processing ultrafast carrier dynamics, semiconductor optical amplifier.

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mentioning

confidence: 99%

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

Dorren

Yang

Mishra

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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“…For a 2.5 ps pulse, the fast gain recovery component is mainly attributed to carrier cooling [11], [13], [14]. In the TETE case, it remains significant even at high pump pulse energies, whereas in the TMTM case, its contribution to the recovery is less significant as the pump pulse energy increases.…”

Section: B Polarization Dependent Dynamicsmentioning

confidence: 97%

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Philippe

Bradley

Kennedy

et al. 2008

J. Lightwave Technol.

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Abstract-A free-space contra-propagation configuration is implemented and pump-probe studies are undertaken in order to study polarization-dependent gain dynamics in bulk semiconductor optical amplifiers (SOAs) and their application to gain and polarization switching. The polarization dependence of the gain compression shows that the co-polarized case, in which the pump and probe are TE-polarized, is the optimum for gain switching. When injecting light polarized at 45 , an additional contribution due to the presence of rotating fields is observed, and the cross-polarized case is found to be the most promising for polarization switching. The potential for all-optical switching based on nonlinear polarization rotation (NLPR) induced in the SOA is then assessed through characterization of the dynamics of the state of polarization. It is demonstrated that by careful selection of the orientation of a linear polarizer in front of the detector, it is possible to reduce the recovery time from 100 to 5 ps. The improvement comes about from the selection of the intraband fast gain recovery dynamics. Polarization switching offers potentially faster switching times compared to gain switching as well as an extinction ratio improvement of 10 dB.

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“…(1) represents the stimulated emission. From [7,8] we present the electron temperature rate equation as: (2) where, T L is lattice temperature. The second, third and last terms on the right-hand side of Eq.…”

Section: Theoretical Modelmentioning

confidence: 99%

Picosecond Gain Recovery Dynamics in Semiconductor Optical Amplifiers and Three-Wavelength Devices

Wang¹,

Sheng²,

Liu³

2012

2012 Symposium on Photonics and Optoelectronics

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Based on density matrix equations, a broad-band timedomain large-signal model for semiconductor optical amplifiers (SOAs) is established. Accounting for spectral hole burning, carrier heating and carrier density modulation (CDM), we analysis the gain dynamics in a SOA stimulated by a 1ps pump pulse. On picosecond timescale, the ultrafast component of gain recovery dynamics is wavelength dependency. Furthermore, in three-wavelength devices, the long-lived recovery tail induced by CDM can be reduced by proper continuous-wave assistant light in gain region close to gain transparency point. And then the full gain recovery time up to 1.04ps is obtained.

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Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers

Cited by 110 publications

References 25 publications

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

Experimental Investigation of Polarization Effects in Semiconductor Optical Amplifiers and Implications for All-Optical Switching

Picosecond Gain Recovery Dynamics in Semiconductor Optical Amplifiers and Three-Wavelength Devices

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