1969
DOI: 10.1063/1.1657111
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Theory of High Field Conduction in a Dielectric

Abstract: A dimensionless solution is given for continuous current flow in a solid dielectric, which undergoes electron-induced collision ionization. A method is developed for finding the current-voltage characteristic of the dielectric from this solution, given the emission function of the cathode and a blocking anode. The results are used to infer the thickness dependence of dielectric breakdown strength based on the model considered.

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Cited by 94 publications
(16 citation statements)
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“…(ii) The small ionization ID model, when hole drift opposes ionization and the product of the ionization coefficient , and insulator thickness w, ~,w < 1 (32,35). (iii) The large ionization ID model; as described under (ii), but with ~w > 1.…”
Section: Deterministic Models Of Breakdown By Impact Ion-mentioning
confidence: 99%
“…(ii) The small ionization ID model, when hole drift opposes ionization and the product of the ionization coefficient , and insulator thickness w, ~,w < 1 (32,35). (iii) The large ionization ID model; as described under (ii), but with ~w > 1.…”
Section: Deterministic Models Of Breakdown By Impact Ion-mentioning
confidence: 99%
“…The classical solid dielectric breakdown theory includes intrinsic breakdown, avalanche breakdown, thermal breakdown, and electro-mechanical breakdown, which were established by A. von. Hippel [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ], H. Frohlich [ 15 , 16 , 17 , 18 , 19 , 20 , 21 ], and F. Seitz [ 22 , 23 , 24 , 25 , 26 , 27 , 28 ] and later refined by G. C. Garton [ 29 ], S. Whitehead [ 30 , 31 ], and J. J. O’Dwyer [ 32 , 33 , 34 ]. The classical breakdown theory mainly focuses on questions such as the difference between intrinsic breakdown and avalanche breakdown, the relation between electric breakdown strength ( E BD ) and dielectric thickness ( d ), the dependence of E BD on temperature ( T ), and the tendency of E BD in applied waveforms, etc.…”
Section: Introductionmentioning
confidence: 99%
“…For thin films of nm thickness, a high electric field assists the diffusion of ionic point defects necessary for oxidation reactions. 158 One hypothesis is that film growth is dependent on the migration of interstitial cation vacancies from the film/solution interface to the metal/film interface where the rate-limiting step is cation injection. The uniform electric field produces a shift in the Fermi level across the film, also called the Mott potential, which drives ionic transport and electron tunneling.…”
Section: Overview Of Metallic Corrosionmentioning
confidence: 99%