The electron mobility due to the scattering by ripplons is calculated for surface electrons localized over a thick layer enriched with 3 He above the 3 He-4 He mixture. The temperature dependence of the mobility is determined for several thicknesses of the layer and small holding electric fields normal to the liquid helium surface. The mobility of surface electrons over bulk pure 3 He is also considered, and the results are in excellent agreement with the available experimental data, in spite of the estimates of strong ripplon damping in 3 He.