Theory of Electroluminescence

Piper, W. W.; Williams, Ferd

doi:10.1103/physrev.98.1809

Cited by 74 publications

(25 citation statements)

References 17 publications

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“…3(a)]. Such an excitation scheme is known in conventional semiconductors to generate excitonmediated EL [18,19] and free carrier recombination [20,21]. In CNFETs, we detect EL without the exponential increase of the drain current usually associated with free carrier generation.…”

mentioning

confidence: 89%

Exciton Formation and Annihilation during 1D Impact Excitation of Carbon Nanotubes

Marty

Adam

et al. 2006

Phys. Rev. Lett.

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Near-infrared electroluminescence was recorded from unipolar single-wall carbon nanotube field-effect transistors at high drain-source voltages. High resolution spectra reveal resonant light emission originating from the radiative relaxation of excitons rather than heat dissipation. The electroluminescence is induced by only one carrier type and ascribed to 1D impact excitation. An emission quenching is also observed at high field and attributed to an exciton-exciton annihilation process and free carrier generation. The excitons' binding energy in the order of 270 meV for 1.4 nm SWNTs is inferred from the spectral features.

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mentioning

confidence: 89%

Exciton Formation and Annihilation during 1D Impact Excitation of Carbon Nanotubes

Marty

Adam

et al. 2006

Phys. Rev. Lett.

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“…There are three main mechanisms of excitation in the theory of electroluminescence [44]. One mechanism is the direct ionization of impurity systems by a strong local electric field of about 10 7 V/cm.…”

Section: Cnt Light Emittermentioning

confidence: 99%

Doping-free carbon nanotube optoelectronic devices

2011

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Semiconducting carbon nanotubes (CNTs) possess outstanding electrical and optical properties because of their special one-dimensional (1D) structure. CNTs are direct bandgap materials, which makes them ideal for use in optoelectronic devices, e.g. light emitters and light detectors. Excitons determine their light absorption and light emission processes due to the strong Coulomb interactions between electrons and holes in CNTs. In this paper, we review recent progress in CNT photodetectors, photovoltaic devices and light emitters. In particular, we focus on the doping-free CNT optoelectronic devices developed by our group in recent years.carbon nanotube, diode, photodetector, LED, solar cell, doping-free Citation:Wang S, Zhang Z Y, Peng L M. Doping-free carbon nanotube optoelectronic devices.

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“…The lighting-emitting diode (LED) is a revolutionary, compact, and energy-saving light source. It can directly convert electrical currents into radiative emission through the electroluminescence effect 1 , 2 and has been widely used in many commercial applications, such as LCD panel backlighting 3 – 5 , optical telecommunications 6 , 7 , and general lighting 8 – 10 . As the lighting market has grown rapidly in recent years, the demand for high-power LEDs has become higher than ever.…”

Section: Introductionmentioning

confidence: 99%

Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography

Lee

Chou

Huang

et al. 2017

Sci Rep

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The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10−5 °C−1 to 14.10 × 10−5 °C−1 in the junction temperature range 25–225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

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Theory of Electroluminescence

Cited by 74 publications

References 17 publications

Exciton Formation and Annihilation during 1D Impact Excitation of Carbon Nanotubes

Exciton Formation and Annihilation during 1D Impact Excitation of Carbon Nanotubes

Doping-free carbon nanotube optoelectronic devices

Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography

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