“…Much attention is given to studying of the defect kinetics and stress evolution during semiconductor processing because defect and stress engineering can significantly improve the device performance. 1, 2,9 For example, many efforts are directed to a study of the stress-mediated diffusion of impurity atoms and point defects, 10,11,12,13,14 including the influence of elastic stresses on the drift of point defects near the surface or at the interfaces, 15,16,17 and near different inhomogeneities of semiconductor crystals. 10,18 .…”