2012
DOI: 10.1143/jpsj.81.063709
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Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study

Abstract: An effective model that describes the Kondo effect due to a point defect in graphene is developed, taking account of the electronic state and the lattice structure of the defect. It is shown that this model can be transformed into a singlechannel pseudogap Anderson model with a finite chemical potential. On the basis of the numerical renormalization group method, it is clarified that the experimentally observed gate-voltage dependence of the Kondo temperature is understood in this framework.

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Cited by 37 publications
(72 citation statements)
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“…Also, it is surprising that the transport data could be fitted to theoretical results for metallic Kondo screening even near neutrality where standard single-parameter scaling is not expected due to strong energy dependence of the host DOS. Despite interesting proposals and ideas [62,63], we feel that a convincing theoretical explanation for the results of Ref. [59] is missing to date.…”
Section: Defectsmentioning
confidence: 82%
“…Also, it is surprising that the transport data could be fitted to theoretical results for metallic Kondo screening even near neutrality where standard single-parameter scaling is not expected due to strong energy dependence of the host DOS. Despite interesting proposals and ideas [62,63], we feel that a convincing theoretical explanation for the results of Ref. [59] is missing to date.…”
Section: Defectsmentioning
confidence: 82%
“…(15) and used to describe H Q1D AIM in Eq. (19). The "on-site potential" and "nearest-neighbor hopping" matrices,Ê l andT l , respectively, in Eq.…”
Section: B Symmetrization Of Bl Basesmentioning
confidence: 99%
“…One of the possible explanations of the emergent magnetic moment in graphene with a structural defect is due to the partially filled dangling bonds of sp 2 orbital on carbon atoms surrounding the vacancy [19][20][21][22][23][24][25]. It has been also pointed out that the scattering of defects drastically changes the electronic structures of π band and produces the logarithmic divergence at E F in the local density of states at the vicinity of defects [21,26,27].…”
Section: Introductionmentioning
confidence: 99%
“…The technologically and conceptually important issue of creating localized magnetic moments in monolayer graphene, and the appearance of the Kondo effect, have been the focus of many recent theoretical [9][10][11][12][13][14][15][16][17][18][19][20] and experimental [21][22][23][24] studies, with controversial results (see [25] for an overview). A more complex DOS appears in bilayer graphene (BLG), a material that can be gapped by gating, and thus has attracted much attention for possible device applications [26].…”
mentioning
confidence: 99%