Theory of anisotropy of two-photon absorption in zinc-blende semiconductors

Hutchings, D. C.; Wherrett, B. S.

doi:10.1103/physrevb.49.2418

Cited by 93 publications

(91 citation statements)

References 21 publications

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“…This is consistent to the theoretical results in Ref. [8] which also shows the small values (|σ| ∼ 0.5) in our measured wavelength range. From the anisotropy comparison between the MQW and bulk GaAs, we can conclude that the optical anisotropy of two-photon absorption are further enhanced in the quantum well structures and energy at the two-photon absorption edge.…”

Section: Resultssupporting

confidence: 95%

Optical anisotropy of two‐photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence

Morita

Niki

Kada

et al. 2010

Phys. Status Solidi (c)

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Photoluminescence (PL) as a consequence of a two‐photon absorption excitation was measured in a GaAs/AlGaAs (001) multiple quantum well (MQW) at room temperature and an optical anisotropy of the two‐photon absorption was investigated by PL intensity depending on the polarization direction of the normal‐incidence excitation light. The anisotropic behavior with a four‐fold rotation symmetry was observed in the polarization dependence. Strength of the two‐photon absorption reaches its maximum when the excitation light is polarized to the [110] and [1$ \bar 1 $0] directions. It was found that the anisotropic behavior becomes more significant as the excitation energy approaches near the two‐photon absorption edge. The anisotropy parameter |σ| determined by the theoretical fitting curve reaches ∼ 2 at the two‐photon absorption edge, which was about 4 times larger than that of the bulk GaAs (|σ| ∼ 0.5). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 95%

Optical anisotropy of two‐photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence

Morita

Niki

Kada

et al. 2010

Phys. Status Solidi (c)

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“…These simulations have been shifted along the ∆φ-axis to line up with the data, to show that the magnitudes of the simulations are in good quantitative agreement with the data. The single value of 3.2% was chosen for 1 2 abc aa aaaa I ξ ξ ξ to give the best fit to all population control data, while values of σ and δ were taken from a 14-band model calculation [13]. The dashed lines in Fig.…”

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confidence: 99%

Coherent control of carrier population and spin in (111)‐GaAs

Stevens

Bhat

Sipe

et al. 2003

Physica Status Solidi (b)

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PACS 72.25.Fe We report independent coherent control of carrier population and spin in (111)-oriented GaAs arising through quantum interference of the transition amplitudes associated with one-and two-photon absorption of ~100 fs phase-locked optical pulses. We demonstrate this coherent control using various combinations of pulse polarizations and crystal orientations. In addition, we present a phenomenological framework for the spin and population control, and present predictions based on a macroscopic symmetry analysis that agree with our experimental observations.1 Introduction A number of schemes have been implemented that use optical fields to coherently control electron populations in semiconductors. Many of these schemes used one photon absorption of multiple phase-related optical pulses having a single frequency (i.e. a single color) [1][2][3]. Additionally, circularly polarized light can be used to generate spin-polarized carrier populations in direct-gap semiconductors [4], and in the burgeoning field of "spintronics", optics has played a key role in the injection and study of electron spin [5,6]. Some of the one-color coherent control schemes have used the polarization of the incident pulses to control carrier spin [1,2]. There was also a report [7] of using the optical Stark effect to optically manipulate the direction of electron spin, although this latter technique [7] did not rely on the relative optical phase of the pulses.In addition, two-color quantum interference control [8] techniques have been used to control carrier density in semiconductors. By using phase-controlled optical pulses with frequencies ω and 2ω propagating along the [111] direction in bulk GaAs, Fraser et al. showed [8,9] that carrier population can be coherently controlled through quantum interference between the transition amplitudes associated with single photon absorption of 2ω and two photon absorption of ω connecting the same initial valence band and final conduction band states. However, population control was demonstrated for only one combination of 2ω and ω polarizations [9]. Moreover, in this previous study [9], no spin control was reported.In this paper, by contrast, we demonstrate all-optical injection and coherent control of both the carrier population and the spin of the population. We use two-color quantum interference to independently control population and spin by systematically varying the phases and polarizations of the two incident pulses and by rotating the sample. In addition, we present a macroscopic symmetry analysis that gives quantitative predictions of both spin and population control for these polarization configurations and sample orientations. We show that these predictions agree with our experimental observations.

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“…For GaAs, however this range is only 10 meV. 21,22 As seen in the 14 band calculation shown in the inset of Fig. 2, the two-photon degree of spin polarization in this range can be very different from the rest of the spectrum.…”

Section: 17mentioning

confidence: 96%

“…Our two-photon spin injection calculation is similar to the two-photon absorption calculation of Hutchings and Wherrett. 21 We can reproduce their results by removing remote band effects, which they did not include.…”

mentioning

confidence: 99%

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Two-photon spin injection in semiconductors

Bhat¹,

Němec²,

Kerachian³

et al. 2004

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technolo

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A comparison is made between the degree of spin polarization of electrons excited by one-and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time-and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one-and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with theory. The macroscopic symmetry and microscopic theory for two-photon spin injection are reviewed, and the latter is generalized to account for spin-splitting of the bands. The degree of spin polarization of one-and two-photon optical orientation need not be equal, as shown by calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14 × 14 k · p Hamiltonian including remote band effects. By including the higher conduction bands in the calculation, cubic anisotropy and the role of allowed-allowed transitions can be investigated. The allowed-allowed transitions do not conserve angular momentum and can cause a high degree of spin polarization close to the band edge; a value of 78% is calculated in GaSb, but by varying the material parameters it could be as high as 100%. The selection rules for spin injection from allowed-allowed transitions are presented, and interband spin-orbit coupling is found to play an important role.

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Theory of anisotropy of two-photon absorption in zinc-blende semiconductors

Cited by 93 publications

References 21 publications

Optical anisotropy of two‐photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence

Optical anisotropy of two‐photon absorption in GaAs/AlGaAs quantum wells measured by photoluminescence

Coherent control of carrier population and spin in (111)‐GaAs

Two-photon spin injection in semiconductors

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