Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain

Uskov, Alexander V.; Boucher, Yann; Bihan, Jean Le; McInerney, John G.

doi:10.1063/1.122185

Cited by 53 publications

(27 citation statements)

References 10 publications

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“…The effective capture time c is an es-sential parameter in laser dynamics, e.g., through nonlinear gain. 15,17 In the following sections, we will derive expressions for the capture time and estimate the effective capture time c in single-and two-phonon capture processes. In general, the rate of carrier capture into an empty QD state of definite spin can be written as…”

Section: Modelmentioning

confidence: 99%

One- and two-phonon capture processes in quantum dots

Magnúsdóttir

Uskov

Bischoff

et al. 2002

Journal of Applied Physics

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Section: Modelmentioning

confidence: 99%

One- and two-phonon capture processes in quantum dots

Magnúsdóttir

Uskov

Bischoff

et al. 2002

Journal of Applied Physics

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“…Because of this assumption, we obtain a sublinear LCC only if the recombination rate in the reservoir is superlinear. In contrast, when the carrier capture rate itself is nonlinear and grows faster with than does the recombination rate, then a superlinear LCC is theoretically possible [35].…”

Section: Discussionmentioning

confidence: 99%

“…The external differential quantum efficiency is defined as (35) In view of the current-dependence of the internal quantum efficiency (Fig. 1), the product of the latter and the optical efficiency does not present in general the external efficiency.…”

Section: E External Differential Quantum Efficiencymentioning

confidence: 99%

Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Abstract-We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency int that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling int and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm 2 ). Output powers in excess of 10 W at int higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.Index Terms-Quantum dots (QDs), quantum wells (QWs), quantum wires (QWRs), semiconductor heterojunctions, semiconductor lasers.

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“…g o = σ res ν g , where σ res is the cross section of interaction of carriers in the dots with photons, ν g is the group velocity, ϑ = 2N d Γ d , where Γ is the confinement factor and d is the thickness of the dot layer. 41 The parameters γ and τ describe the feedback level and delay time. The function F (N, ρ) describes the rate of exchange of carriers between the well and the dots.…”

Section: The Modelmentioning

confidence: 99%

Reduced sensitivity to external feedback in quantum dot lasers

et al. 2004

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We analyse the sensitivity of quantum dot semiconductor lasers to optical. While bulk and quantum well semiconductor lasers are usually extremely unstable when submitted to back reflection, quantum dot semiconductor lasers exhibit a reduced sensitivity. Using a rate equation approach, we show that this behaviour is the result of a relatively low but nonzero line-width enhancement factor and of strongly damped relaxation oscillations.

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Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain

Cited by 53 publications

References 10 publications

One- and two-phonon capture processes in quantum dots

One- and two-phonon capture processes in quantum dots

Internal efficiency of semiconductor lasers with a quantum-confined active region

Reduced sensitivity to external feedback in quantum dot lasers

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