Theory of a field-effect transistor based on a semiconductor nanocrystal array

Reich, K. V.; Chen, Tianran; Shklovskiǐ, B. I.

doi:10.1103/physrevb.89.235303

Cited by 15 publications

(14 citation statements)

References 37 publications

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“…Important early steps in this direction were reported in the recent work of the Shklovskii group. 26,30 They analyzed the non-trivial evolution of the electron distributions in the first and second layers, and the resulting low-temperature conductivity, as the overall electron filling was varied. One of the key outcomes of this work was the theoretical demonstration of strong commensuration effects emerging.…”

Section: Introductionmentioning

confidence: 99%

Commensuration effects in layered nanoparticle solids

Hansen

Vörös

et al. 2020

Phys. Rev. B

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We have developed HiNTS, the Hierarchical Nanoparticle Transport Simulator, and adapted it to study commensuration effects in two classes of Nanoparticle (NP) solids: (1) a bilayer NP solid (BNS) with an energy offset, and (2) a BNS as part of a Field-Effect Transistor (FET). HiNTS integrates the ab initio characterization of single NPs with the phonon-assisted tunneling transition model of the NP-NP transitions into a Kinetic Monte Carlo based simulation of the charge transport in NP solids. First, we studied a BNS with an inter-layer energy offset ∆, possibly caused by a fixed electric field. Our results include the following. (1) In the independent energy-offset model, we observed the emergence of commensuration effects when scanning the electron filling factor F F across integer values. These commensuration effects were profound as they reduced the mobility by several orders of magnitude. We analyzed these commensuration effects in a five dimensional parameter space, as a function of the on-site charging energy EC , energy offset ∆, the disorder D, the electron filling factor F F , and the temperature kBT . We demonstrated the complexity of our model by showing that at integer filling factors F F commensuration effects are present in some regions of the parameter space, while they vanish in other regions, thus defining distinct dynamical phases of the model. We determined the phase boundaries between these dynamical phases.(2) Using these results as a foundation, we shifted our focus to the experimentally much-studied NP-FETs. NP-FETs are also characterized by an inter-layer energy offset ∆, which, in contrast to our first model, is set by the gate voltage VG and thereby related to the electron filling F F . We repeated many of our simulations and again demonstrated the emergence of commensuration effects and distinct dynamical phases in these NP-FETs. Notably, the commensuration effects in the NP-FETs showed many similarities to those in the independent energy-offset BNS.

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Section: Introductionmentioning

confidence: 99%

Commensuration effects in layered nanoparticle solids

Hansen

Vörös

et al. 2020

Phys. Rev. B

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“…However, neither of them was capable of taking into account size disorder effects, and typically the NPs were small. Yet others focused on model Hamiltonian approaches and built a qualitative understanding of NP FETs 58 , photoconductors 59 and studied the effect of disorder in NP films providing some initial insights into the mechanism of MIT 60 – 63 . After all these efforts, a comprehensive transport theory of the MIT in NP solids is still not available and is very much needed.…”

Section: Introductionmentioning

confidence: 99%

Metal-Insulator Transition in Nanoparticle Solids: Insights from Kinetic Monte Carlo Simulations

Vörös

Zimányi

2017

Sci Rep

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Progress has been rapid in increasing the efficiency of energy conversion in nanoparticles. However, extraction of the photo-generated charge carriers remains challenging. Encouragingly, the charge mobility has been improved recently by driving nanoparticle (NP) films across the metal-insulator transition (MIT). To simulate MIT in NP films, we developed a hierarchical Kinetic Monte Carlo transport model. Electrons transfer between neighboring NPs via activated hopping when the NP energies differ by more than an overlap energy, but transfer by a non-activated quantum delocalization, if the NP energies are closer than the overlap energy. As the overlap energy increases, emerging percolating clusters support a metallic transport across the entire film. We simulated the evolution of the temperature-dependent electron mobility. We analyzed our data in terms of two candidate models of the MIT: (a) as a Quantum Critical Transition, signaled by an effective gap going to zero; and (b) as a Quantum Percolation Transition, where a sample-spanning metallic percolation path is formed as the fraction of the hopping bonds in the transport paths is going to zero. We found that the Quantum Percolation Transition theory provides a better description of the MIT. We also observed an anomalously low gap region next to the MIT. We discuss the relevance of our results in the light of recent experimental measurements.

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“…Also we assume that the measurement time is much larger than any relaxation times in the system. Thus, all grains have the same electric potential and the field inside the FE is screened due to presence of grains 20 . For distances Lǫ I ≫ (h − a)r 2 g ǫ FE /(ha) the screening charge at a grain at zero gate voltage is q g = −P r 2 g with P being the magnitude of electric polarization, Appendix A.…”

Section: B Ground Statementioning

confidence: 99%

Proximity coupling of a granular film with a ferroelectric substrate and giant electroresistance effect

Udalov¹,

Chtchelkatchev²,

Beloborodov³

2014

Phys. Rev. B

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We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlled by the direction of ferroelectric polarization. We show that the ferroelectric/granular film system has a large electro-resistance effect. This effect can be utilized in memory and electric field sensor applications.

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Theory of a field-effect transistor based on a semiconductor nanocrystal array

Cited by 15 publications

References 37 publications

Commensuration effects in layered nanoparticle solids

Commensuration effects in layered nanoparticle solids

Metal-Insulator Transition in Nanoparticle Solids: Insights from Kinetic Monte Carlo Simulations

Proximity coupling of a granular film with a ferroelectric substrate and giant electroresistance effect

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