Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors

Fischetti, Massimo V.; Higman, J.M.

doi:10.1007/978-1-4615-4026-7_5

Cited by 42 publications

(14 citation statements)

References 67 publications

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“…Conduction band offsets of 0.53 eV [11] were used for both the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As and In 0.75 Ga 0.25 As/ In 0.52 Al 0.48 As heterojunctions, with 0.34 eV [12] used at the In 0.52 Al 0.48 As/InP interface. In order to more closely model the physical diffusion of impurities that occurs during actual MBE growth, we have spread the simulated δ-doping layer concentration of 3.5 × 10 12 cm −2 over 2-3 grid cells along the positive y-direction.…”

Section: Simulated Structurementioning

confidence: 99%

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

et al. 2008

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We utilize a 3D full-band Cellular Monte Carlo (CMC) device simulator to model ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs). We present the static dc device characteristics and rf response for gate lengths ranging from 10 nm to 50 nm. Preliminary passive results using 3D full-wave Maxwell solver are also presented to illustrate the usefulness of and insight that a future coupled full-band/full-wave simulator will provide in more accurately, modeling the high frequency performance of p-HEMTs.

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Section: Simulated Structurementioning

confidence: 99%

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

et al. 2008

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“…A 320 × 95 cell grid mesh was used. Conduction band offsets of 0.53 eV [7] were used for both In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As and In 0.52 Al 0.48 As/In 0.75 Ga 0.25 As heterojunctions, with 0.34 eV [8] used at the In 0.52 Ga 0.48 As/InP interface. Similar structures are also used for the 35 nm gate length devices simulated with shorter gate lengths and asymmetrically downscaled dimensions.…”

Section: Simulated Structurementioning

confidence: 99%

Hot electron effects in ultra‐short gate length InAs/InAlAs HEMTs

Ayubi-Moak

Akis

Saraniti

et al. 2008

Phys. Status Solidi (c)

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High field transport in short channel (sub‐100 nm gate length), InAs/InAlAs pseudomorphic high‐electron mobility transistors (pHEMTs) has been studied using a full‐band Cellular Monte Carlo (CMC) simulator. Reasonable agreement is obtained between simulated devices and recent experimental results in terms of the current, voltage and cutoff frequency. Both 70 nm and 35 nm gate length devices have been simulated in this work. Sustained high carrier energies near the drain electrode are observed and attributed to the long scatter‐ ing times from both X and L valleys back to the Γ valley in InAs. Strong overshoot effects are also apparent in the velocity, although the corresponding increase in cutoff frequency is not as pronounced as expected from simple scaling of the gate length. The relation of this velocity behaviour to the experimental and simulated frequency response is discussed, as well as the limits of performance in this technology as gate lengths are scaled further. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The CA algorithm tabulates the total transition rate for every initial state to every final state in the entire BZ, hence full anisotropic scattering rates (as calculated for example using the rigid ion model [16]) may be included with no additional computational burden once they are tabulated. At every time step in the simulation, a random number is used to determine if scattering occurs or not based on the total scattering rate for a particle in a particular momentum state.…”

Section: Carrier Dynamicsmentioning

confidence: 99%

“…Since the transition tables used in the CA are precomputed, the execution time of the transport kernal is independent of the model used, whether it is approximate parabolic band rates, or completely anistropic scattering rates derived from first principles electronic structure calculations. There are various approaches to the problem of the calculation of the electron -phonon interaction directly from the electronic structure and phonon dispersion, but for semiconductor materials, the main results reported to date for transport calculations are based on the so called rigid ion model [16]. Empirical models may be employed in the rigid ion model for the electron and phonon states, such as the EPM and valence shell models discussed earlier.…”

Section: Anisotropic Scattering Ratesmentioning

confidence: 99%

Particle‐based Full‐band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP

Saraniti

Goodnick³

2002

VLSI Design

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We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-generated carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

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Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors

Cited by 42 publications

References 67 publications

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Hot electron effects in ultra‐short gate length InAs/InAlAs HEMTs

Particle‐based Full‐band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP

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