Theory and application of Kossel x‐ray diffraction in the scanning electron microscope

Dingley, David J.

doi:10.1002/sca.4950010201

Cited by 18 publications

(12 citation statements)

References 33 publications

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“…Zu jedem HOLZ-Reflex werden zwei Linien beobachtet, eine helle (,,excess") HOLZ-Linie aul3en auf dem HOLZ-Ring und eine dunkle (,,defect") HOLZ-Linie im zentralen (000) Beugungsscheibchen. Wegen ihres elastischen Ursprungs konnen diese HOLZ-Linien als das elektronenoptische Analogon zu den Kossel'schen Gitterquelleninterferenzen aus der Rontgenbeugung angesehen werden (Williams, 1984;Haussiihl, 1979;Dingley, 1979). Zur Vermeidung von Mehrdeutigkeiten ist es wichtig, klar zwischen HOLZ-Kikuchilinien und HOLZ-Linien sowie ihrem unterschiedlichen physikalischen Hintergrund zu unterscheiden.…”

Section: W Braueunclassified

Konvergente Elektronenbeugung in der analytischen Elektronenmikroskopie keramischer Werkstoffe – eine Anleitung für die Praxis

Braue

1990

Materialwissenschaft Werkst

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Die konvergente Elektronenbeugung (CBED) wird als ergänzendes Verfahren zur analytischen Elektronenmikroskopie vorgestellt. Im Gegensatz zur Feinbereichsbeugung ist das Auflösungsvermögen nicht aperturbestimmt, sondern hängt vom Durchmesser der verwendeten Sonde ab. Durch die Erfassung der höheren Laue‐Zonen (HOLZ) kann der dreidimensionale Gitteraufbau rekonstruiert werden, wobei die HOLZ‐Liniensymmetrie ein wichtiges Kriterium für die Bestimmung der Punktsymmetrie bzw. Raumgruppe darstellt. Aus dem Bereich carbidischer und nitridischer Werkstoffe werden typische Anwendungsbeispiele für die konvergente Beugung diskutiert. Abschließend werden Hinweise für praktische Arbeit am Mikroskop und die Optimierung von CBED‐Aufnahmen gegeben.

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Section: W Braueunclassified

Konvergente Elektronenbeugung in der analytischen Elektronenmikroskopie keramischer Werkstoffe – eine Anleitung für die Praxis

Braue

1990

Materialwissenschaft Werkst

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“…Grant et al 1986b) and the Kossel technique (e.g. Dingley, 1978;Doherty, 1980). The ability to collect diffraction patterns from localized regions in SEM specimens adds greatly to the importance of this technique.…”

Section: G R a I N G R O W T Hmentioning

confidence: 99%

Applications of electron microscopy in materials science and technology (microscopy in the modern world)*

Ralph¹

1989

Journal of Microscopy

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KEY w O R D S . Electron microscopy, materials science, microstructure/property relationships, phase transformations, interfaces. S U M M A R YA personal overview is presented attempting to show something of the broad range of applications of techniques associated with electron microscopy in the field of materials science and technology. The importance of electron microscopy in understanding microstructure/property relationships and the evolution of microstructure is stressed. In addition, some of the important uses of electron optical techniques in the more applied areas of materials technology are surveyed. The format adopted in this presentation is to illustrate the applications of electron microscopy in materials science and technology by citing recent studies. These include investigations of deformation, of grain growth, of precipitation and phase transformations and of the determination of the structure of interfaces.

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“…The so called Kossel lines are a similar type of diffraction effect that can be observed via characteristic X‐rays emitted from sources inside a crystal . With reference to corresponding measurements for neutrons, it has been suggested to collectively denote diffraction patterns from incoherent internal sources in a crystal as “K‐patterns” .…”

Section: Introductionmentioning

confidence: 99%

Model mechanisms in Kikuchi pattern formation from crystals

Winkelmann

2017

Crystal Research and Technology

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In diffraction experiments on crystals, different types of diffraction patterns can be observed. Depending on various factors like the scattering energy, scattering geometry, sample temperature, or structural disorder, one can observe a combination of discrete diffraction patterns caused by coherent scattering of the incident beam and a structured background formed by patterns which can be explained by emission from internal incoherent sources inside the crystal. For the case of electron diffraction, these patterns from incoherent internal sources are called Kikuchi patterns. It will be shown here that the transition from the discrete coherent electron diffraction patterns to Kikuchi patterns, as well as similar effects in X-ray and neutron diffraction, can be analyzed qualitatively by a simple model involving a twostep scattering process. An elementary double-scattering model is presented extending the kinematic model of X-ray diffraction. The double-scattering model outlines the key mechanism that can destroy the coherence between the first scatterers while at the same time some coherence can be preserved in the secondary scattering pathways starting at each of the individual first scatterers, respectively. In this way, the model presented here highlights some non-trivial experimental effects of coherence loss under conditions of multiple scattering of waves in crystals.

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Theory and application of Kossel x‐ray diffraction in the scanning electron microscope

Cited by 18 publications

References 33 publications

Konvergente Elektronenbeugung in der analytischen Elektronenmikroskopie keramischer Werkstoffe – eine Anleitung für die Praxis

Konvergente Elektronenbeugung in der analytischen Elektronenmikroskopie keramischer Werkstoffe – eine Anleitung für die Praxis

Applications of electron microscopy in materials science and technology (microscopy in the modern world)*

Model mechanisms in Kikuchi pattern formation from crystals

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