Theoretical study on the electron structure and optical properties of Cs adsorption on In0.53Ga0.47As (100) β2 (2 × 4) reconstruction surface

Recent experimental measurements of a bulk material covered with a small number of graphene layers reported by Yamaguchi et al. [NPJ 2D Mater. Appl. 1, 12 (2017)] (on bialkali) and Liu et al. [Appl. Phys. Lett. 110, 041607 (2017)] (on copper) and the needs of emission models in beam optics codes have lead to substantial changes in a Moments model of photoemission. The changes account for (i) a barrier profile and density of states factor based on density functional theory (DFT) evaluations, (ii) a Drude-Lorentz model of the optical constants and laser penetration depth, and (iii) a transmission probability evaluated by an Airy Transfer Matrix Approach. Importantly, the DFT results lead to a surface barrier profile of a shape similar to both resonant barriers and reflectionless wells: the associated quantum mechanical transmission probabilities are shown to be comparable to those recently required to enable the Moments (and Three Step) model to match experimental data but for reasons very different than the assumption by conventional wisdom that a barrier is responsible. The substantial modifications of the Moments model components, motivated by computational materials methods, are developed. The results prepare the Moments model for use in treating heterostructures and discrete energy level systems (e.g., quantum dots) proposed for decoupling the opposing metrics of performance that undermine the performance of advanced light sources like the x-ray Free Electron Laser. The consequences of the modified components on quantum yield, emittance, and emission models needed by beam optics codes are discussed.

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Theoretical study on the electron structure and optical properties of Cs adsorption on In0.53Ga0.47As (100) β2 (2 × 4) reconstruction surface

Cited by 3 publications

References 15 publications

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As

A photoemission moments model using density functional and transfer matrix methods applied to coating layers on surfaces: Theory

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Theoretical study on the electron structure and optical properties of Cs adsorption on In0.53Ga0.47As (100) β2 (2 × 4) reconstruction surface

Cited by 3 publications

References 15 publications

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Theoretical study on the electronic and optical properties of bulk and surface (001) In x Ga 1-x As

A photoemission moments model using density functional and transfer matrix methods applied to coating layers on surfaces: Theory

Contact Info

Product

Resources

About

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)