2007
DOI: 10.1021/jp065453q
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Theoretical Study of the Pyrolysis of Methyltrichlorosilane in the Gas Phase. 1. Thermodynamics

Abstract: Structures and energies of the gas-phase species produced during and after the various unimolecular decomposition reactions of methyltrichlorosilane (MTS) with the presence of H2 carrier gas were determined using second-order perturbation theory (MP2). Single point energies were obtained using singles + doubles coupled cluster theory, augmented by perturbative triples, CCSD(T). Partition functions were obtained using the harmonic oscillator-rigid rotor approximation. A 114-reaction mechanism is proposed to acc… Show more

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Cited by 47 publications
(71 citation statements)
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“…1 In the present work, 41 reactions have been determined to have no well-defined transition state (TS) by the following means. First, bondbreaking reactions without significant reconstruction of electronic structure are assumed to have no well-defined transition state.…”
Section: Resultsmentioning
confidence: 99%
“…1 In the present work, 41 reactions have been determined to have no well-defined transition state (TS) by the following means. First, bondbreaking reactions without significant reconstruction of electronic structure are assumed to have no well-defined transition state.…”
Section: Resultsmentioning
confidence: 99%
“…The effect that argon has on SiC deposition is not by participating in any reaction for the formation of SiC, but by reducing the concentration of hydrogen which is an important reactant in both the decomposition of MTS and the reactions leading to the formation of SiC [48,49]. As hydrogen concentration decreases, the heterogeneous reactions leading to the formation of carbon sites are favoured, therefore eliminating the excess Si and promoting the formation of stoichiometric SiC [44,46].…”
Section: Sic Deposition With the Addition Of Argonmentioning
confidence: 99%
“…In addition to the codeposition of Si, porosity was also found to be formed for some cases at deposition temperatures below 1500°C. [20][21][22][23][24][25][26][27][28][29][30][31][32] Similarly, although not for this particular application, other reactants such as methane, ethane, and propane have been added to the reaction mixture in addition to MTS and hydrogen to produce SiC, providing aneffective method to modify the microstructure and stoichiometry of SiC. For these reasons typical SiC coatings are generally produced between 1500 and 1600°C with grain sizes between 1 and 8 m and with coating rates of around 0.2 m/min.…”
Section: Introductionmentioning
confidence: 99%