Theoretical Study of The Charge Control in AlGaN/GaN HEMTs

Aziz, M. Abdel; Elabd, Ali A.

doi:10.1109/nrsc.2006.386378

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Cited by 6 publications

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“…(1) The piezoelectric polarization P PE is calculated by nonlinear formulation for a wide range of the Al content k, where the polarization constants are the same as in Ref. [13]. (5)…”

Section: Surface Potentialmentioning

confidence: 99%

A surface-potential-based model for AlGaN/AlN/GaN HEMT

et al. 2013

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A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

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“…(1) The piezoelectric polarization P PE is calculated by nonlinear formulation for a wide range of the Al content k, where the polarization constants are the same as in Ref. [13]. (5)…”

Section: Surface Potentialmentioning

confidence: 99%