Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide

Zhang, Siqing; Liu, Yan; Fang, Cizhe; Shao, Yufeng; Han, Genquan; Zhang, Jincheng; Hao, Yue

doi:10.1016/j.spmi.2018.06.059

Cited by 8 publications

(6 citation statements)

References 31 publications

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“…The common 2D materials integrated with waveguides are mainly graphene, BP, and transition metal sulfides such as molybdenum sulfide (MoS 2 ), MoTe 2 , tungsten sulfide (WS 2 ), and boron nitride (BN). [23][24][25] However, due to the small bandgap of 2D materials, there have been no reports on UV photodetectors integrating waveguides and 2D materials. In contrast, UV photodetectors integrating waveguides and 3D or 1D semiconductor materials, such as Al x Ga 1−x N and ZnO nanowires, have been reported.…”

Section: Waveguide Types and Semiconductor Materials Used For Photode...mentioning

confidence: 99%

“…Firstly, various waveguides and semiconductor materials are employed in the fabrication of integrated waveguide photodetectors, including Si, silicon nitride (Si 3 N 4 ), gallium nitride (GaN), organic waveguides, graphene, [17][18][19][20][21][22] MoTe 2 , black phosphorus (BP), carbon nanotubes, and palladium selenide (PdSe 2 ). [23][24][25][26][27][28][29] Secondly, the waveguide type is further divided into end-coupled waveguide, grating coupled waveguide, and ring waveguide. [30][31][32] Thirdly, the reported photodetectors with integrated waveguides mainly include infrared (IR) photodetectors, visible (VIS) photodetectors, and ultraviolet (UV) photodetectors.…”

Section: Introductionmentioning

confidence: 99%

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Photodetectors integrating waveguides and semiconductor materials

Wang,

Zeng,

et al. 2024

Nanoscale

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Section: Waveguide Types and Semiconductor Materials Used For Photode...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photodetectors integrating waveguides and semiconductor materials

Wang,

Zeng,

et al. 2024

Nanoscale

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“…Thus, the strained BP suggests great potential for optoelectronic devices. [18][19][20] The calculated results show that the electronic transport properties of BP are changed by dopant atoms. [21,22] The successful growth of centimeter-scale selenium-doped BP crystals with controllable doping contents has been reported by Xu et al [23] Xuan and Zhang showed that both nitrogen and hole-carrier doping can raise the energy degeneracy and place BP in a profound global energy minimum.…”

Section: Introductionmentioning

confidence: 96%

Mid‐Infrared Photodetector Based on Selenium‐Doped Black Phosphorus

Jalaei

Karamdel

Ghalami-Bavil-Olyaee

2020

Physica Status Solidi (a)

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Black phosphorus (BP), a new elemental 2D material, is a suitable candidate for broadband photodetection from the visible to the infrared (IR) range of the spectrum because of its tunable bandgap and high carrier mobility. Herein, the electrical and optical properties of pristine and Se‐doped BP have been investigated, using the density functional theory (DFT) method. The results show that the Se‐doped BP has an indirect bandgap of 0.4 eV which is smaller than that of the pristine monolayer BP. Moreover, the Se‐doped BP exhibits higher optical absorption compared with pristine BP in the low energy regions. Furthermore, the simulation results of designed (12 nm thick) field‐effect transistors, based on Se doped BP, show excellent optoelectronic properties in the mid‐IR photodetector applications. The responsivity of this device reaches up to about 0.75 μA W−1 in a mid‐IR region of 4 μm with an excitation intensity of 0.0001 W cm−2 and bias voltage and drain voltage of 1 and 0.5 V, respectively. Finally, the results demonstrate that doping BP with Se improves device performance by increasing optical properties and enhances responsivity of the mid‐IR photodetector.

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“…The third advantage of black phosphorene is its intrinsic bipolarity [ 4 , 14 ], which is critical for logic circuits containing p-n junctions. These advantages render black phosphorene to be the most promising candidate for optoelectronic and spintronic devices [ 15 , 16 , 17 ]. However, when black phosphorene is applied in optoelectronic and spintronic devices, its electronic and magnetic properties often need to be further modified and tailored.…”

Section: Introductionmentioning

confidence: 99%

The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene

Wang

Zhang

et al. 2019

Nanomaterials

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Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring phosphorus atoms also first increase and then reduce. However, the band gap of Al-doped phosphorene reduces monotonically from 0.44 eV to 0.13 eV while that of Cl-doped phosphorene first decreases from 0.10 eV to 0 and then becomes flat, which is a result of the impurity levels emerging and splitting. Besides, in doped phosphorenes with an even number of impurity atoms, the antiferromagnetic order is favored by energy. Through computing the magnetic moment and spin distribution, we further confirm the antiferromagnetic order existing only in the doped phosphorenes with two and four Cl atoms. These results may provide some help for future applications of black phosphorene in spintronics.

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Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide

Cited by 8 publications

References 31 publications

Photodetectors integrating waveguides and semiconductor materials

Photodetectors integrating waveguides and semiconductor materials

Mid‐Infrared Photodetector Based on Selenium‐Doped Black Phosphorus

The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene

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