“…In the present work we chose the Lippmann-Schwinger approach for the following reasons: It is very flexible, lending itself well to calculations of transport in the linear response regime for tight-binding models of nanostructures of many different materials, with arbitrary geome- tries. This versatility has made possible its application to theoretical studies of electron transport in 2D semiconductor nanostructures, 35 in disordered metal nanostructures 36 , in ferromagnetic atomic contacts, 37 in monolayer graphene nanostructures, 13 in molecules bridging transition metal electrodes 38 and gold electrodes, 39 in molecular spin current rectifiers, 40 in arrays of molecules on silicon, 41 in electrochemically gated protein nanowires, 42 in single molecule nanomagnets bridging metal electrodes, 43 in Fe/GaAs spin valves, 44 in scanning tunneling microscopy of molecules, 45 in molecular electroluminescence, 46 in ballistic electron spectroscopy of buried molecules, 47 in vibrational spectroscopy of molecular junctions, 48 and others. The Lippmann-Schwinger equation is readily applicable to calculations of transport in nanostructures with arbitrary numbers of electrical contacts 13 when combined with the Büttiker-Landauer formalism 14 .…”