1999
DOI: 10.1016/s0009-2614(99)01089-1
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Theoretical study of Si3H3+ and Ge3H3+ isomers

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Cited by 11 publications
(8 citation statements)
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“…The Si 3 Au 3 + cation is interesting because its hydride analog, the cyclotrisilenylium ion (D 3h Si 3 H 3 + ) is a 2p aromatic species, which has been extensively studied. [60][61][62][63][64] An aromatic cyclotrisilenylium ion with bulky substituents, which bears similarities with Si 3 H 3 + , has been successfully synthesized. 65 Our structural search indeed showed that the lowest energy isomer for Si 3 Au 3 + (D 3h , 1 A 1 ) is identical to Si 3 H 3 + .…”
mentioning
confidence: 99%
“…The Si 3 Au 3 + cation is interesting because its hydride analog, the cyclotrisilenylium ion (D 3h Si 3 H 3 + ) is a 2p aromatic species, which has been extensively studied. [60][61][62][63][64] An aromatic cyclotrisilenylium ion with bulky substituents, which bears similarities with Si 3 H 3 + , has been successfully synthesized. 65 Our structural search indeed showed that the lowest energy isomer for Si 3 Au 3 + (D 3h , 1 A 1 ) is identical to Si 3 H 3 + .…”
mentioning
confidence: 99%
“…15 The various basis sets for G2 calculations of compounds containing third-row elements have been developed by Curtiss et al [16][17][18] and shown to give energy results with an average absolute deviation of 1.37 kcal mol -1 from experiment for 40 test reactions.…”
Section: Calculationsmentioning
confidence: 99%
“…single-point energy calculations because correlating these orbitals has been found to be important in the calculations of Ge 3 H 3 + isomers. 15 The various basis sets for G2 calculations of compounds containing third-row elements have been developed by Curtiss et al [16][17][18] and shown to give energy results with an average absolute deviation of 1.37 kcal mol -1 from experiment for 40 test reactions.…”
Section: Calculationsmentioning
confidence: 99%
“…They measured the rate constants for second‐ and third‐order reactions of all the primary ions GeH n + ( n = 0–3) and observed secondary ions up to Ge 2 H 7 + and Ge 3 H 9 + . Many experimental2–5 and theoretical6–17 studies on the structure, stability, and thermochemistry of GeH n + ( n ≥ 1) and Ge m H n + ( m > 1, n ≥ 1) have been also subsequently reported. Over the years, the interest in the chemistry of ionised GeH 4 and GeH 4 ‐based mixtures has become progressively related to the preparation, by chemical vapour deposition techniques,18 of amorphous semiconductors for electronic and optoelectronic devices 19, 20.…”
Section: Introductionmentioning
confidence: 99%