Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model

Habchi, M.M.; Nasr, Abdelaziz; Rebey, A.; Jani, B. El

doi:10.1016/j.infrared.2014.09.032

Cited by 32 publications

(9 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been observed that the intrinsic carrier concentration doubled per %B while higher incorporation of boron composition onto GaAs host material changes significantly the effective density of state in both the VB and CB. 29 Analyzing these dependencies, one can see that the breaking of covalent bonds in the crystal lattice directly depends upon temperature, which means weaker bonds required less energy than the stronger bond. Secondly, a more significant number of carriers are available at a higher temperature, which then causes electrons to gain enough energy to break free due to higher thermal energy.…”

Section: Mathematical Modellingmentioning

confidence: 99%

Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications

Sharma

2020

Journal of Elec Materi

View full text Add to dashboard Cite

Boron dopant incorporation into host GaAs material to form a novel BGaAs semiconductor has been studied using a 10-band kp model. This model allows us to calculate the electronic band structure along the crystallographic direction. So, from the obtained E-k relation, we calculate the carrier effective mass, intrinsic carrier concentration, and x = 0 (GaAs) are in good agreement with previously reported literature. The intrinsic carrier concentration variation is seen as monotonic with boron composition. On the other hand, the composition-dependent Debye temperature observed reduction along with symmetry directions, K by 1.23/%B, R by À 2.33/%B, and D by À 3.52/%B, which leads to the lower stability of crystalline BGaAs alloy. In addition, the interband absorption coefficient as a function of photon energy shows nonmonotonic dependence with fundamental absorption observed at 1.39 eV. Whereas, in the case of quantum well, the optical gain spectrum peak is blueshifted with the density of injected carriers. Hence, this study provides beneficial guidance in the interpretation of applications such as solar cells, optical modulators, multiple QWs.

show abstract

Section: Mathematical Modellingmentioning

confidence: 99%

Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications

Sharma

2020

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6] Most of them use molecular beam epitaxy followed by related optical characterization of the bandedge. 11,12 Theoretically, a lot of work 13,14 has been done since the 12-band model [15][16][17][18][19] was proposed based on the valence band anticrossing (VBAC) model. However, not much progress has been made on the study of GaBiAs quantum dots (QDs).…”

Section: Introductionmentioning

confidence: 99%

Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots

Song

Bose

Fan

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inIntraband optical transition in InGaAs/GaAs pyramidal quantum dots J. Appl. Phys. 113, 064310 (2013); 10.1063/1.4790870 Analysis of the modified optical properties and band structure of GaAs1−xSbx-capped InAs/GaAs quantum dots J. Appl. Phys. 112, 074311 (2012); 10.1063/1.4755794 Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Appl.

show abstract

“…These alloys have been the focus of intensive research work in recent years owing to their interesting physical properties such as the temperature insensitive [1], the large band-gap reduction [2][3][4][5][6] and the strong spin-orbit splitting [7,8]. The effect of Bi incorporation into GaAs on the band-gap [9] and carrier effective mass [10] was theoretically studied using valence band anticrossing model. Wu et al [11] have examined the band anticrossing (BAC) effect on the band-gap and electron effective mass of the highly mismatched GaAs 1 À x N x alloys.…”

Section: Introductionmentioning

confidence: 99%