Theoretical study of Ni adsorption on the GaN(0001) surface

Photoelectron spectroscopy of electronic surface structure of the Cs/GaN and Cs/InN interfaces

“…The calculations of the electronic band structure and surface states for GaN and InN were performed based on the density functional theory (DFT) within the local density approximation 3 . The theoretical investigations of the adsorption and electronic properties of the GaN(0001) surface were performed using the first‐principle spin‐polarized calculations using DFT within a plane‐wave pseudo‐potential framework 4 . Photoemission spectroscopy and quantum yield measurements were performed on GaN films to characterize various cesium and oxygen activities 5 .…”

“…Although the electronic structure of gallium nitride and indium nitride surfaces has been studied from many aspects, 3–14 the metal/GaN and metal/InN interfaces are still not well understood. There is a need for additional studies of surface states, interface formation, and band bending.…”

Formation of Titanium Nitride on the GaN(0001) Surface: A Density Functional Theory Study

“…Finally, recent experimental and theoretical studies have shown the importance of the transition-metal adsorption on GaN surfaces; in particular, has been studied the Fe, 13) Mn, 14) Ni, 15) and Co 16) adsorption on the GaN(0001) surface. Additionally, it also has been studied the formation of transition-metal interlayers on the GaN surfaces, as: ScN, 17) VN, 18) TiN, 19) MnGa x , 14) and FeGa x .…”

Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes

“…There are many options of metal combinations for the contact mirror, such as Ni/Ag/Pt [3], Ni/Ag/Ti/Au [5], Ni/Au/W/Ag [6] and Ni/Ag/Ru/Au [7]. In these metal stacks, the first layer next to the p-GaN is always Ni which is critical to form ohmic contact [8][9][10]. The second layer is usually a highly reflective metal such as Ag or Au [11], while Ag is preferable due to its higher reflectivity.…”