Theoretical study of laser cooling of a semiconductor

Huang, Danhong; Apostolova, Tzveta; Alsing, Paul M.; Cardimona, D. A.

doi:10.1103/physrevb.70.033203

Cited by 44 publications

(41 citation statements)

References 22 publications

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“…As a result, the lattice will be cooled due to the loss of thermal energy to electrons. We have developed a nonlocal theory for the laser cooling of semiconductors [6]. Our results indicate that the optimum conditions for cooling of a semiconductor are: (i) have a large bandgap and (ii) have a weak pump laser.…”

Section: Quantum Electronic Refrigerationmentioning

confidence: 97%

Advanced space-based detector research at the Air Force Research Laboratory

Alsing¹,

Cardimona²,

Huang³

et al. 2007

Infrared Physics & Technology

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Section: Quantum Electronic Refrigerationmentioning

confidence: 97%

Advanced space-based detector research at the Air Force Research Laboratory

Alsing¹,

Cardimona²,

Huang³

et al. 2007

Infrared Physics & Technology

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“…͑17͒. Compared to the previous theory 7,9 at earlier times, we have employed the generalized KMS relation in the calculations of W sp pl and W sp ex . Because of the different lattice temperature T L and carrier temperature T c , there exists a thermal energy exchange between phonons and charged carriers in the system, which is represented by the last term on the right-hand side of Eq.…”

Section: ͑18͒mentioning

confidence: 99%

“…Therefore, the thermalization of hot carriers can be approximately regarded as an adiabatic process compared to the slow radiative-decay process, i.e., the total energy of charged particles remains conserved at each moment. Based on the conservation of total energy of charged particles, the dynamical energy equation for the e-h plasmas can be written as 7,9 …”

Section: B Dynamical Energy Balance Equationmentioning

confidence: 99%

“…Therefore, a dynamical energy equation is required to describe this energy imbalance and the compensation from the thermal exchange between phonons and photoexcited carriers. 7 As a result, optical carrier cooling is expected in steady state with a pump laser if the optically absorbed power becomes smaller than the spontaneous power loss, which is different from the lattice cooling in semiconductors by photoluminescence. This turns out to be the microscopic origin for laser cooling of a lattice in thermally isolated semiconductors [7][8][9][10] if the heating to the lattice such as Auger recombination 11 can be controlled in the system.…”

Section: Introductionmentioning

confidence: 99%

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Many-body effects on optical carrier cooling in intrinsic semiconductors at low lattice temperatures

Huang

Alsing

2008

Phys. Rev. B

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YY) SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)AFRL/RVSS SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #RV08-261 -10 Apr 08). SUPPLEMENTARY NOTES"Government Purpose Rights." Interim Report for in-house DF621940. Published in the Physical Review B, Vol 78, p 035203 (2008). ABSTRACTBased on the coupled density and energy balance equations, a dynamical model is proposed for exploring many-body effects on optical carrier cooling (not lattice cooling) in steady state in comparison with the earlier findings of current-driven carrier cooling in doped semiconductors [X.L. Lei and C.S. Ting, Phys. Rev. B32, 1112 (1985)] and tunneling-driven carrier cooling through discrete levels of a quantum dot [H.L. Edwards et al., Phys. Rev. B52, 5714 (1995)]. This dynamical carrier-cooling process is mediated by a photoinduced nonthermal electron-hole composite plasma in an intrinsic semiconductor under a thermal contact with a low-temperature external heat bath, which is a generalization of the previous theory for a thermal electron-hole plasma [H. Haug and S. Schmitt-Rink, J. Opt. Soc. Am. B 2, 1135 (1985)]. The important roles played by the many-body effects such as band-gap renormalization, screening, and excitonic interaction are fully included and analyzed by calculating the optical-absorption coefficient, spontaneous emission spectrum, and thermalenergy exchange through carrier-phonon scattering. Both the optical carrier cooling and heating are found with increasing pump-laser intensity when the laser photon energy is set below and above the band gap of an intrinsic semiconductor. In addition, the switching from carrier cooling to carrier heating is predicted when the frequency detuning of a pump laser changes from below the band gap to above the band gap. Based on the coupled density and energy balance equations, a dynamical model is proposed for exploring many-body effects on optical carrier cooling ͑not lattice cooling͒ in steady state in comparison with the earlier findi...

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“…Recently, several theoretical papers investigating the cooling characteristics of photoluminescence refrigeration have been published, [3][4][5] including an analysis of photon recycling in a doped glass cube. 5 However, the influence of photon recycling on cooling efficiency, cooling power density, and the conditions for cooling has not yet been discussed in detail for luminescence refrigeration in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Influence of photon recycling on semiconductor luminescence refrigeration

Wang

Johnson

Ding

et al. 2006

Journal of Applied Physics

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Luminescence refrigeration in semiconductors is studied using a model that includes the rate equations for carriers and photons as well as the influence of spectral dependent photon recycling. Expressions are derived for cooling efficiency, cooling power density, and the minimum external quantum efficiency required for cooling. These results show that net cooling is accessible and that photon recycling significantly contributes to luminescence refrigeration when the luminescence extraction is small.

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Theoretical study of laser cooling of a semiconductor

Cited by 44 publications

References 22 publications

Advanced space-based detector research at the Air Force Research Laboratory

Advanced space-based detector research at the Air Force Research Laboratory

Many-body effects on optical carrier cooling in intrinsic semiconductors at low lattice temperatures

Influence of photon recycling on semiconductor luminescence refrigeration

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