Theoretical study of graded bandgap CZTSSe solar cells with two absorber layers

Amiri, Samaneh; Dehghani, Sajjad; Safaiee, R.

doi:10.1007/s11082-020-02441-2

Cited by 12 publications

(6 citation statements)

References 26 publications

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“…Furthermore, Eq. (17) is expected to help model the defect density in graded-bandgap and quantum-well-based CZTSSe thin-film solar cells 45 , 46 , 51 , 52 and better predict optimal designs for experimentalists.…”

Section: Resultsmentioning

confidence: 99%

“…33, p. 95]. Finally, the assumption of either very high τnormalnnormals or Egs-independent τnormalnnormals 46 , 47 , 51 , 52 will deliver an unreliable prediction of the device performance.…”

Section: Resultsmentioning

confidence: 99%

“…But in either case, the process is dictated by the defect density chosen for the simulation, 42 and an inadequate choice can lead to a poor prediction of the device performance. With increased interest in bandgap-graded and quantum-well CIGS and CZTSSe thin-film PVSCs, 6 , 17 , 18 , 43 – 52 a knowledge of defect density and carrier lifetimes in relation to Eg (and therefore ξ) is a must.…”

Section: Introductionmentioning

confidence: 99%

“…Higher gallium content (i.e., higher ξ) leads to higher Nnormalf and lower τnormaln, and some nonlinear fits of Nnormalf to ξ have been proposed 25 , 31 . However, a systematic study of the performance parameters of a solar cell with a homogeneous CIGS layer versus ξ can establish Nnormalf and τnormaln for simulating graded-bandgap 46 – 49 and quantum-well 50 – 52 CIGS solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

et al. 2023

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.Detailed optoelectronic simulations of thin-film photovoltaic solar cells (PVSCs) with a homogeneous photon-absorber layer made of with CIGS or CZTSSe were carried out to determine the effects of defect density, minority carrier lifetime, doping density, composition (i.e., bandgap energy), and absorber-layer thickness on solar-cell performance. The transfer-matrix method was used to calculate the electron-hole-pair (EHP) generation rate, and a one-dimensional drift-diffusion model was used to determine the EHP recombination rate, open-circuit voltage, short-circuit current density, power-conversion efficiency, and fill factor. Through a comparison of limited experimental data and simulation results, we formulated expressions for the defect density in terms of the composition parameter of either CIGS or CZTSSe. All performance parameters of the thin-films PVSCs were thereby shown to be obtainable from the bulk material-response parameters of the semiconductor, with the influence of surface defects being small enough to be ignored. Furthermore, unrealistic values of the defect density (equivalently, minority carrier lifetime) will deliver unreliable predictions of the solar-cell performance. The derived expressions should guide fellow researchers in simulating the graded-bandgap and quantum-well-based PVSCs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

et al. 2023

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“…Theoretical studies have shown that bandgap grading of the main photon-absorbing semiconductor layer can significantly improve the efficiency of thin-film solar cells [12][13][14][15][16][17][18], and this idea has been backed by simple experimental studies with bandgap grading achieved through compositional grading possible in compound semiconductors [19][20][21]. CIGS [12,13], CZTSSe [15,16], and AlGaAs [18] thin-film solar cells with graded-bandgap absorbing layers have been theoretically predicted to deliver one-sun efficiencies as high as 27.7%, 21.7%, and 34.5%, respectively, whereas the best conventional crystalline-silicon solar cell has a one-sun efficiency of 26.7% [5,6].…”

Section: Introductionmentioning

confidence: 99%

Enhanced efficiency of graded-bandgap thin-film solar cells due to concentrated sunlight

2021

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A systematic study was performed with a coupled optoelectronic model to examine the effect of the concentration of sunlight on the efficiencies of CIGS, CZTSSe and AlGaAs thin-film solar cells with a graded-bandgap absorber layer. Efficiencies of 34.6% for CIGS thin-film solar cells and 29.9% for CZTSSe thin-film solar cells are predicted with a concentration of 100 suns, the respective one-sun efficiencies being 27.7% and 21.7%. An efficiency of 36.7% is predicted for AlGaAs thin-film solar cells with a concentration of 60 suns, in comparison to 34.5% one-sun efficiency. Sunlight concentration does not affect the per-sun electron–hole-pair (EHP) generation rate but reduces the per-sun EHP recombination rate either near the front and back faces or in the graded-bandgap regions of the absorber layer, depending upon the semiconductor used for that layer, and this is the primary reason for the improvement in efficiency. Other effects include the enhancement of open-circuit voltage, which can be positively correlated to the higher short-circuit current density. Sunlight concentration can therefore play a significant role in enhancing the efficiency of thin-film solar cells.

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Enhanced CZTSSe Thin‐Film Solar Cell Efficiency: Key Parameter Analysis

Hafaifa,

Maache,

Rabhi

et al. 2024

Physica Status Solidi (a)

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This work presents a numerical simulation study on CZTSSe‐based thin‐film solar cells using Silvaco Atlas software, focusing on optimization and loss analysis. Starting from an initial power conversion efficiency of 12.73%, the ZnO/CdS/CZTSSe cell structure is systematically optimized. Through precise adjustment of layer thickness and doping density, the efficiency is improved to 18.75%. The optimal parameters are 2.5 μm (1017 cm−3) for CZTSSe, 0.01 μm (1018 cm−3) for CdS, and 0.02 μm (1019 cm−3) for ZnO. Loss analysis reveals that increasing CZTSSe thickness beyond 2.5 μm leads to higher bulk series resistance, while thicker CdS and ZnO layers reduce photocurrent generation. Doping density significantly impacts open‐circuit voltage, while layer thickness primarily affects short‐circuit current and fill factor. Performance improves at lower temperatures, achieving 22.2% efficiency at 250 K. These findings provide valuable insights for developing high‐efficiency CZTSSe solar cells.

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Theoretical study of graded bandgap CZTSSe solar cells with two absorber layers

Cited by 12 publications

References 26 publications

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

Enhanced efficiency of graded-bandgap thin-film solar cells due to concentrated sunlight

Enhanced CZTSSe Thin‐Film Solar Cell Efficiency: Key Parameter Analysis

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