Theoretical Study of Gallium Nitride Crystal Growth Reaction Mechanism

Removal of Ca and K from Metallic Na in TFSI Ionic Liquids Using an Exchange Reaction

“…In recent years, power devices using GaN with low power losses have been developed, and the GaN is made by various methods using sapphire or silicon carbide as the substrate and growing the GaN crystals on the substrate. [9][10][11] However, there are lattice mismatches and differences in the coefficients of thermal expansion of the substrate materials and the GaN crystals, and a large number of crystal defects have adverse effects on device performance characteristics, including output and lifetime. 9,12,13 The Na flux method is considered to offer a method for growing bulk GaN crystals with fewer defects.…”