Theoretical study of field emission from diamond

Huang, ZhaoHui; Cutler, P.H.; Miskovsky, N. M.; Sullivan, T. E.

doi:10.1063/1.112636

Cited by 116 publications

(41 citation statements)

References 13 publications

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“…They further observed that the main barrier lies at the front surface, which is related to the conduction-band offset. A number of other models have also been proposed in literature based on negative electron affinity, 63 defect bands in diamond, 64 surface dipole-controlled emission, 65 and field enhancement due to surface features. 66 Although they can be used to fit some emission data from different types of films, none of them is universally acceptable.…”

Section: Comparison Of Results Obtained With Those Existing In Litmentioning

confidence: 99%

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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This article reports the influence of substrate bias during growth and of hydrogen and nitrogen incorporation on density of states ͓N ͑E F ͔͒ and field-emission threshold ͑E turn-on ͒ in tetrahedral amorphous carbon ͑ta-C͒ films, deposited using an S-bend filtered cathodic vacuum arc process. The variation in negative substrate bias from Ϫ20 to Ϫ200 V was found to initially lead to a small decrease in N ͑E F ͒ and E turn-on , and a small increase in the emission current density ͑J͒ at 12.5 V / m in the case of as-grown ta-C films; beyond Ϫ200 V substrate bias there is a reversal in the trend. The values of N ͑E F ͒ = 1.3ϫ 10 17 cm −3 eV −1 , E turn-on = 8.3 V / m, and J = 6.19 mA/ cm 2 were observed at Ϫ200 V substrate bias. However at Ϫ300 V the properties were not very different from those at Ϫ200 V substrate bias and so with a view to use the higher energy, hydrogen and nitrogen incorporation studies were carried out in this condition. It was observed that there was further enhancement in properties with hydrogen and nitrogen incorporation. The best properties measured with in the range of hydrogen and nitrogen incorporation in the present study were N ͑E F ͒ = 8.0ϫ 10 16 cm −3 eV −1 , E turn-on = 7.6 V / m, and J = 23.7 mA/ cm 2 , respectively.

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Section: Comparison Of Results Obtained With Those Existing In Litmentioning

confidence: 99%

Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

Panwar

Khan

Satyanarayana³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…A satisfactory field emission behavior of the DLC films can probably be attributed to the presence of both graphite and diamond carbon components and there may be an optimum abundance ratio and connectivity of the network of diamond and graphitic carbon components in the DLC films where these films may perform as better field emitters. Again, in the defect subband model of field emission advanced by Huang et al, 40 it is proposed that the electrons participating in the field emission phenomenon originate from the defect site band, located below the conduction band minimum. Indeed, emissivity of diamond in many experiments has been found to increase with the increase of defect concentration.…”

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confidence: 99%

Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

Panwar

Rupesinghe

Amaratunga

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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This article reports the field emission measurements on as grown tetrahedral amorphous carbon ͑ta-C͒ and nitrogen incorporated tetrahedral amorphous carbon ͑ta-C: N͒ films grown using a pulsed filtered cathodic vacuum arc technique. The effect of varying thickness on field emission in the as grown ta-C films and the effect of varying nitrogen content in ta-C: N films have also been studied. The values of threshold field of emission ͑E turn on ͒ increase with decrease of thickness in the as grown ta-C films. Nitrogen incorporation up to 5.2 at. % in ta-C films decreases the value of E turn on from 9.9 to 5.1 V / m and thereafter it starts increasing again. To understand the mechanism of electron emission, a realistic energy band diagram of ta-C : N / n ++ Si heterojunction has been proposed from the experimentally measured valence and conduction band offsets, using in situ x-ray photoelectron spectroscopy and optical spectroscopy data already published in DRM 9 ͑2000͒ 1148. The data are explained using the Fowler and Nordheim theory. The field emission results obtained reveal that there exists a barrier to emission and the main barrier is at the front surface and this is related to the conduction band offset of the ta-C : N / n ++ Si heterojunction.

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“…It was proposed that conduction channels were provided between the metallic substrate and the emitting surface due to graphite carbon inclusions [8]. On the other hand, subbands in the band gap, which may be generated by defects and impurities were theoretically postulated to explain the field emission characteristics of diamond films [9]. A variation in the internal emission current was observed for N-doped diamond samples in which the roughness of the interface between the cathode metal and the diamond is different [10,11].…”

Section: Introductionmentioning

confidence: 98%