Theoretical Study of a Thermophysical Property of Molten Semiconductors

Abstract

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687-1825 K and 1211-1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as γ = 876 − 0.32 (T − T m ) and γ = 571 − 0.074 (T − T m ) (mJ m −2 ), respectively. These values are in consistence with the reported experimental data (720-875 for Si and 560-632 mJ m −2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.

Real‐Time 3D Visualization of the Formation of Micrograting Structures Upon Direct Laser Interference Patterning of Ge

“…Yet, it is important to emphasize at this point that for the specific case of Ge, all studies reported in literature consistently yield a negative sign of d𝛾/dT for the range from the melting temperature T m up to (T m + 250 K). [34,35] This striking disagreement leaves us with three possible explanations: First, that the gradient becomes positive at much higher temperatures. While this possibility cannot be excluded, it is a mere speculation and brings up the question, why such unusual behavior of the gradient has not been observed before.…”