Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

Mesrane, A.; Mahrane, Achour; Rahmoune, F.; Oulebsir, A.

doi:10.1007/s11664-016-5176-z

Cited by 14 publications

(7 citation statements)

References 14 publications

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“…A first study published in 2008 [8] reports a dual-junction InGaN solar cell with a conversion efficiency of 35.1%. Another similar study published in 2016 [9] confirms these results with a roughly similar efficiency of 34.9%. In these works the two subcells of the solar cell are studied separately.…”

Section: Introductionsupporting

confidence: 80%

Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

Adaine

Hamady

Fressengeas

2017

Superlattices and Microstructures

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The performance of a double heterojunction solar cell based on Indium Gallium Nitride (InGaN) including a tunnel junction was simulated. The most challenging aspects of InGaN solar cells development being the crystal polarization and structural defects detrimental effects, their impact on the solar cell performances has been investigated in detail. The solar cell simulation was performed using physical models and InGaN parameters extracted from experimental measurements. The optimum efficiency of the heterojunction solar cell was obtained using a multivariate optimization method which allows to simultaneously optimize eleven parameters. The optimum defect free efficiency obtained is 24.4% with a short circuit current J SC = 12.92mA/cm 2 , an open circuit voltage V OC = 2.29V and a fill factor FF = 82.55%. The performances evolution as functions of the polarization and the defects types and parameters was studied from their maximum down to as low as a 2% efficiency.

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Section: Introductionsupporting

confidence: 80%

Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

Adaine

Hamady

Fressengeas

2017

Superlattices and Microstructures

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“…In order to absorb most parts of the solar spectrum in the infrared, polymer with a low bandgap should be chosen as an active layer [45,46] However, it has been demonstrated that the usage of a low bandgap material is not the most efficient way of maximizing the photovoltaic performances. Simulation and calculation show that there is a theoretical optimum bandgap for organic (1.9 eV) [18], single-junction (1.1 eV) [47], and p-n junction solar cell (1.1 eV) [18,47] which give the best performance of the solar cells. The currently available organic materials have a gap which is still large when comparing to the ideal values.…”

Section: Incoupling and Absorption Of Incident Photonmentioning

confidence: 97%

Optimization of Bulk Heterojunction Organic Photovoltaic Devices

Tiwari¹,

Yakhmi²,

Carter³

et al. 2017

Handbook of Ecomaterials

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“…Fluctuations in the arrangement of InN and GaN inside InGaN, the band gap of this semiconductor material can be changed. Subsequently, a high efficiency solar cell can possibly be created by having a few InGaN intersections [3,4]. In addition, it has attractive photovoltaic properties such as high radiation tolerance, high mobility and a high absorption coefficient allowing thin layers of material to absorb most of the solar spectrum [5].…”

Section: Introductionmentioning

confidence: 99%

“…A. Mesrane and F. Rahmoune obtain the maximum conversion efficiency around 26.5 % of the single junction In 0.622 Ga 0 . 378 N (1.39 eV) solar cell with the best structure parameters in 2015 [3].…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Annab,

Baghdadli,

Mamoun

et al. 2023

JOR

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InxGa1-xN, as one promising nitride semiconductor alloys for modern optoelectronic devices, has received extensive attention in recent years. However, due to its powerful modulation of energy band gap from UV to visible spectra (0.7-3.4 eV) and its interesting absorption coefficient can range from 103 to 105 cm-1 , depending on the material properties, it can be considered as a potential candidate for high efficiency solar cells. The actual efficiency reached is (30.38%) [1]. In order to enhance more the efficiency, we perform in this work, a device modeling and numerical simulation using SCAPS software. We optimize the photovoltaic characteristics of a solar cell based on InxGa1-xN. This cell is mainly composed of indium gallium nitride semiconductors for both buffer and active layer p-InxGa1-xN/i-InxGa1-xN and the window layer contains of n-ZnO. The optimization of the various optoelectronic parameters allows improving performance of the solar cell, in addition to absorbing as much solar radiation as possible. The main photovoltaic parameters of the analog device: open circuit voltage, short circuit current density, fill factor and conversion efficiency (η) were compared and analyzed. We have reached the conversion efficiency of 26.11% for a thickness of 1450 nm and an n-doping of 3×1018 cm-3 in the active layer (In0.3Ga0.7N). This study investigates the great potential of InGaN solar cells and can be used for the design and manufacture of high efficiency III-nitride based solar cells.

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Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

Cited by 14 publications

References 14 publications

Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

Effects of structural defects and polarization charges in InGaN-based double-junction solar cell

Optimization of Bulk Heterojunction Organic Photovoltaic Devices

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

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