Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot

Mal, Indranil; Samajdar, Dip Prakash; Peter, A. John

doi:10.1016/j.spmi.2018.04.043

Cited by 17 publications

(6 citation statements)

References 32 publications

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“…Regardless of presence of noise, the OG peaks do not display any shift with increase in

σ_{normalv}

. And under all conditions, the height of the OG peak increases steadily with increase in

σ_{normalv}

[ 40,41,48 ] since more and more carriers occupy higher energy levels. The plots of OG peak versus

σ_{normalv}

(Figure 13d) run in agreement with aforementioned findings as they display steady enhancement of OG peak values with

σ_{normalv}

under all circumstances.…”

Section: Resultsmentioning

confidence: 99%

Profiles of Optical Gain of Impurity‐Doped Quantum Dots under the Stewardship of Gaussian White Noise

Arif

Roy²,

Bera

et al. 2022

Physica Status Solidi (b)

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The optical gain (OG) of quantum dots containing impurity is dealt with in the present investigation under the governance of applied Gaussian white noise. In this regard, various pertinent physical parameters are varied over a range and the resulting variations of OG are thoroughly monitored. Along with OG, the profiles of the gain radiative current density and the bandgap are also analyzed. The authors have come across that the presence/absence of noise, the mode of application of noise (additive/multiplicative), the particular physical parameter concerned, and the range of magnitude of the physical parameter, in unison, govern the features of the OG profiles in diverse ways. The study reveals that tuning of various physical parameters under applied noise in some preferred mode can be useful for the attainment of high OG and saturation gain. Tuning of emission wavelength can also be exploited to design tunable light sources.

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“…Regardless of presence of noise, the OG peaks do not display any shift with increase in

σ_{normalv}

. And under all conditions, the height of the OG peak increases steadily with increase in

σ_{normalv}

[ 40,41,48 ] since more and more carriers occupy higher energy levels. The plots of OG peak versus

σ_{normalv}

(Figure 13d) run in agreement with aforementioned findings as they display steady enhancement of OG peak values with

σ_{normalv}

under all circumstances.…”

Section: Resultsmentioning

confidence: 99%

Profiles of Optical Gain of Impurity‐Doped Quantum Dots under the Stewardship of Gaussian White Noise

Arif

Roy²,

Bera

et al. 2022

Physica Status Solidi (b)

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“…, and eðpÞ is the pressure dependent strain coefficient; other parameters are well defined in ref. [32].…”

Section: Hydrostatic Pressure Dependent K á P Hamiltonianmentioning

confidence: 99%

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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The hydrostatic pressure induced band diagram of an InGaAsN/GaAs spherical quantum dot (QD) system is theoretically calculated using an expanded form of standard 8 band k · p Hamiltonian. The band parameters including energy gap, band offsets, and effective masses of electron and hole as a function of hydrostatic pressure are extracted using 10 band k · p model to calculate optical gain, threshold current density, and confined exciton binding energies of the QD system for the possible potential applications in 1.3–1.55 μm laser diodes. The optical gain increases with the increase in hydrostatic pressure up to 30 kbar and eventually decreases for further application of higher pressures. This effect is not usually observed in InGaAsN/GaAs quantum wells owing to the strong dependence of hole and electron effective masses with the hydrostatic pressure. A relative blue shift is observed in the gain spectra due to the increase in hydrostatic pressure or carrier concentration whereas a redshift is observed due to the increase in geometrical dimensions or impurity concentration which helps in estimating the range of operation of InGaAsN/GaAs QD based devices. The obtained binding energies, threshold current densities, and strain within the QDs help in understanding the influence of pressure and dot radius on these parameters.

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“…The sizes and shapes of these quantum systems are shown to have more predominance in the properties of semiconductors than their composition [18]. Among these structures, there is special interest in cylindrical QDs [19][20][21]. These, depending on their radius and height ratios, can be represented as (i) 1D-systems, called quantum-well wires, in which the height of the cylinder is much larger than the radius of the structure; and (ii) 2D-systems, called quantum-wells.…”

Section: Introductionmentioning

confidence: 99%

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field

et al. 2021

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Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe–CdTe core–shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system’s azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe–CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.

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Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot

Cited by 17 publications

References 32 publications

Profiles of Optical Gain of Impurity‐Doped Quantum Dots under the Stewardship of Gaussian White Noise

Profiles of Optical Gain of Impurity‐Doped Quantum Dots under the Stewardship of Gaussian White Noise

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field

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