Theoretical studies of inorganic and organometallic reaction mechanisms. 3. The origin of the difference in the barrier for the kinetic and thermodynamic products for the oxidative addition of dihydrogen to a square-planar iridium complex

Sargent, Andrew L.; Hall, Michael B.; Guest, Martyn F.

doi:10.1021/ja00028a018

Cited by 62 publications

(41 citation statements)

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“…In order to realize the multilayer nucleation of MoSe 2 , higher temperatures were necessary. For CVD growth of multilayer MoSe 2 , high temperature can introduce a thermodynamic process comparing to a kinetic process at low temperature, which is a general case for temperature selective growth in chemistry . At high temperature, upper triangles usually grow from the same nucleation site at the center of the bottom triangle for multilayer MoSe 2 .…”

Section: Methodsmentioning

confidence: 99%

Layer Engineering of 2D Semiconductor Junctions

Sobhani

Lei

et al. 2016

Advanced Materials

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A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.

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Section: Methodsmentioning

confidence: 99%

Layer Engineering of 2D Semiconductor Junctions

Sobhani

Lei

et al. 2016

Advanced Materials

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“…Sargent, Hall and Guest investigated the oxidative addition of H 2 to IrCl(CO)(dppe) by ab initio MO techniques 13 using two cis PH 3 groups to mimic the dppe ligand. They found that while addition over the P-Ir-Cl axis led to the formation of the more stable isomer, the more stable transition state involved reaction across the P-Ir-CO axis.…”

Section: Introductionmentioning

confidence: 99%

Activation of H2 by halocarbonyl bis-phosphine and bis-arsine iridium(i) complexes. The use of parahydrogen induced polarisation to detect species present at low concentration and investigate their reactivityBased on the presentation given at Dalton Discussion No. 4, 10–13th January 2002, Kloster Banz, Germany.

Hasnip

Colebrooke

Sleigh

et al. 2002

J. Chem. Soc., Dalton Trans.

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“…In this case, the kinetic effect would not be critical and the thermodynamically more stable product becomes preferable. [37] As the size increases, WS 2 atomic clusters evolves into irregular hexagon shape, and then into near-triangle shape with truncated corners, before they finally form well-known triangular shape. Optical microscope image of chemical vapor deposition-grown WS 2 on a 300 nm SiO 2 / Si substrate ( Figure 1b) and transferred to Au substrate by common wet-transfer method (Figure 1c), showing the typical morphology of triangular WS 2 domains is 20-40 µm.…”

Section: Figure 1amentioning

confidence: 99%

Effect of UV Irradiation and Heat Treatment on the Surface Potential Distribution of Monolayer WS₂ on SiO₂/Si and Au Substrates

Han

et al. 2017

Adv Materials Inter

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bandgap, high carrier mobility, and the absence of dangling bonds, [8] which pave the way toward extensive applications, such as field-effect transistors (FETs), [9][10][11][12][13] stacked Van der Waals superlattices [14] and heterojunctions, [15][16][17] valleytronics, [18][19][20][21] piezotronics, [22][23][24] and novel flexible [25] and transparent electronics and optoelectronics. [26,27] In particular, single-layer WS 2 , with a direct bandgap of 1.8-2.1 eV, strong photoluminescence (PL), relatively high carrier mobility, [28] and excellent mechanical properties, renders it as a promising candidate in optoelectronic devices and flexible devices.Although a variety of nanodevices based on WS 2 nanoflakes have been fabricated for phototransistors and sensors, [29] the interface of WS 2 , an important component in devices, has been frequently ignored. The surface potential, as an important property of the interface, is rele vant to work function and Fermi level of nanomaterials, which is significant for the research of charge transport, carrier concentration, and nanodevices design. Kelvin probe force microscopy (KPFM) has been applied to detect spatial charge distribution of various materials by measuring the contact potential difference (CPD) between the tip and samples. [30] Presently some relevant works about surface potential of transition metal dichalcogenides (TMDs) have been reported intermittently. [31][32][33] However, few investigations reported the surface potential of chemical vapor deposition-grown monolayer triangular WS 2 . Furthermore, the fabrication of WS 2 and MoS 2 on Au substrates has achieved important progresses. Zhu and co-workers [34] demonstrated for the first time that the crystallography of Au foil substrates made a strong effect on the growth of monolayer MoS 2 . Zhang and co-workers [35] reported the vertical hetero structures of WS 2 /MoS 2 and MoS 2 /WS 2 by sequentially growing the two composite MX 2 monolayers on Au foils through two typical chemical vapor deposition (CVD) routes. Therefore, the study of the contact potential difference between WS 2 and Au substrates is very helpful for material preparation and device applications. Furthermore, the effect of UV laser illumination and heat treatment on surface potential has not been reported yet for CVD-grown monolayer WS 2 , which is significant for study the photo responsivity mechanism and surface state.The surface potential is relevant to work function and Fermi level of materials, which is of great significance to the research of charge transport, carrier concentration, and nanodevices design. Here the effect of UV illumination and heat treatment on the surface potential distribution of chemical vapor deposition grown monolayer WS 2 on SiO 2 /Si and Au substrates is studied statistically. The experimental observation indicates that with the increase in light intensity, the surface potential of WS 2 decreases on SiO 2 /Si substrate, while increases on Au substrate. Heat treatment is introduced to tuning the surface potentia...

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Theoretical studies of inorganic and organometallic reaction mechanisms. 3. The origin of the difference in the barrier for the kinetic and thermodynamic products for the oxidative addition of dihydrogen to a square-planar iridium complex

Cited by 62 publications

References 1 publication

Layer Engineering of 2D Semiconductor Junctions

Layer Engineering of 2D Semiconductor Junctions

Effect of UV Irradiation and Heat Treatment on the Surface Potential Distribution of Monolayer WS₂ on SiO₂/Si and Au Substrates

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Theoretical studies of inorganic and organometallic reaction mechanisms. 3. The origin of the difference in the barrier for the kinetic and thermodynamic products for the oxidative addition of dihydrogen to a square-planar iridium complex

Cited by 62 publications

References 1 publication

Layer Engineering of 2D Semiconductor Junctions

Layer Engineering of 2D Semiconductor Junctions

Effect of UV Irradiation and Heat Treatment on the Surface Potential Distribution of Monolayer WS2 on SiO2/Si and Au Substrates

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Effect of UV Irradiation and Heat Treatment on the Surface Potential Distribution of Monolayer WS₂ on SiO₂/Si and Au Substrates