Theoretical studies of graphene nanoribbon quantum dot qubits

Chen, Chih-Chieh; Chang, Yia-Chung

doi:10.1103/physrevb.92.245406

Cited by 22 publications

(14 citation statements)

References 44 publications

(70 reference statements)

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“…Unique nanoribbon geometries such as chevrons and nanoribbon heterojunctions have also been explored. ,− Nitrogen , and boron can be incorporated into the starting precursors to further modify the GNR band structures. The versatility of bottom-up synthesis promises sophisticated GNR electronics, including transistors and quantum dot qubits, which exhibit long spin coherence times . To fabricate GNR devices, the development of a clean transfer is needed to move nanoribbons from the metal growth surface onto a device compatible substrate such as SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100)

Radocea

Sun

et al. 2016

Nano Lett.

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There has been tremendous progress in designing and synthesizing graphene nanoribbons (GNRs). The ability to control the width, edge structure, and dopant level with atomic precision has created a large class of accessible electronic landscapes for use in logic applications. One of the major limitations preventing the realization of GNR devices is the difficulty of transferring GNRs onto nonmetallic substrates. In this work, we developed a new approach for clean deposition of solution-synthesized atomically precise chevron GNRs onto H:Si(100) under ultrahigh vacuum. A clean transfer allowed ultrahigh-vacuum scanning tunneling microscopy (STM) to provide high-resolution imaging and spectroscopy and reveal details of the electronic structure of chevron nanoribbons that have not been previously reported. We also demonstrate STM nanomanipulation of GNRs, characterization of multilayer GNR cross-junctions, and STM nanolithography for local depassivation of H:Si(100), which allowed us to probe GNR-Si interactions and revealed a semiconducting-to-metallic transition. The results of STM measurements were shown to be in good agreement with first-principles computational modeling.

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Section: Resultsmentioning

confidence: 99%

Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100)

Radocea

Sun

et al. 2016

Nano Lett.

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“…The large-scale fabrication of 1D derivatives of variety range of 2D materials, such as graphene [28][29][30][31] , MoS 2 8,32 , and phosphorene 33 , have been reported. These advances promoted their integration into device applications of spintronics 34,35 , optoelectronics 36 , and quantum information technologies [37][38][39] .…”

Section: Introductionmentioning

confidence: 99%

Edge and Width Dependent Electronic Properties of Nanoribbons of Manganese Oxide

Sozen¹,

C.²,

Şahin³

2022

Preprint

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In the present work, the structural, magnetic, and electronic properties of the two-and onedimensional honeycomb structures of recently synthesized MnO [Zhang et al. Nat. Commun., 20, 1073-1078 (2021] are investigated by using first principles calculations. Our calculations show that the single layer 2D MnO crystal has a degenerate antiferromagnetic (AFM) ground state and a relatively less favorable ferromagnetic (FM) state. In addition, magnetic anisotropy calculations unveil that the easy-axis direction for magnetism originating from unpaired electron states in manganese atoms is normal to the crystal plane. Electronically, while the FM-MnO is a direct semiconductor with a narrow bandgap, AFM phases display large indirect bandgap semiconducting behavior. Moreover, calculations on nanoribbons of MnO reveal that zigzag edged ribbons display metallic bahavior, whereas armchair edged nanoribbons are semiconductors. Magnetically, for both zigzag-or armchair-edged nanoribbons, AFM order perpendicular to the nanoribbon growth direction is found to be favorable over the other AFM and FM orders. Moreover, depending on the edge symmetry and ribbon width, forbidden band gap values of nanoribbons display distinct family behaviors.

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“…These advances promoted their integration into device applications of spintronics, 34,35 optoelectronics, 36 and quantum information technologies. 37–39…”

Section: Introductionmentioning

confidence: 99%