Theoretical simulation and design of two-dimensional ferromagnetic materials

Wang, Bing; Zhou, Qionghua; Wang, Jinlan

doi:10.1360/tb-2020-1044

Cited by 5 publications

(3 citation statements)

References 56 publications

(96 reference statements)

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“…Boron is a special and missing electron element. It can not only form a plurality of forms (sp 1 , sp 2 , sp 3 ) of hybridized covalent bonds, but also have the ability of to gain and lose electrons [16][17][18][19]. Thus, boron and sulfur can form rich and varied compounds, which have flexible bonding ability and special electronic configurations and boron-sulfur compounds have recently attracted a lot of attention [20].…”

Section: Introductionmentioning

confidence: 99%

B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Zhang

Jin

et al. 2021

Nanotechnology

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Atomically two-dimensional materials with direct band-gap and high carrier mobility are highly desirable due to their promising applications in electronic devices. Here, on the basis of ab initio calculations and global particle-swarm optimization method, we predict the B2S3 monolayer as a new semiconductor with favorable functional properties. The B2S3 monolayer possesses a high electron mobility of 553 cm2 V−1 s−1 and a direct band-gap of 1.85 eV. The direct band-gap can be manipulated under biaxial strain. Furthermore, B2S3 monolayer can absorb sunlight efficiently in the entire range of the visible light spectrum. Besides, this monolayer holds good dynamical, thermal, and mechanical stabilities. All the desired properties render B2S3 monolayer a promising candidate for future applications in high-speed (opto)electronic devices.

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Section: Introductionmentioning

confidence: 99%

B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Zhang

Jin

et al. 2021

Nanotechnology

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“…However, 2D magnetic materials, especially ferromagnetic materials, are rare. 8,9 It is limited by the Mermin− Wagner theory, 10 which implies 2D magnetic materials cannot exist in the isotropic Heisenberg model at finite temperature. However, CrI 3 , 11 VSe 2 , 12 FeGeTe 2 , 13,14 CrGeTe 3 (CGT) monolayer (ML), 15−17 and self-intercalation of 2D layered materials 18,19 with intrinsic ferromagnetism have been successfully synthesized in the experiments.…”

Section: Introductionmentioning

confidence: 99%

“…Two-dimensional (2D) intrinsic ferromagnetic materials, especially half-metal (HM), are urgent for the spintronics. , All kinds of 2D materials, such as graphene, h-BN, MoS 2 , , and stanene, have been successfully synthesized in the recent years. However, 2D magnetic materials, especially ferromagnetic materials, are rare. , It is limited by the Mermin–Wagner theory, which implies 2D magnetic materials cannot exist in the isotropic Heisenberg model at finite temperature. However, CrI 3 , VSe 2 , FeGeTe 2 , , CrGeTe 3 (CGT) monolayer (ML), − and self-intercalation of 2D layered materials , with intrinsic ferromagnetism have been successfully synthesized in the experiments.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Stacked 2D-Layered Co₂Ge₂Te₆ with High Curie Temperature and Large Magnetic Crystal Anisotropy

Guan

et al. 2023

J. Phys. Chem. C

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Co 2 Ge 2 Te 6 shows an intrinsic ferromagnetic order, which originates from the superexchange interaction between Co and Te atoms, with a Curie temperature of 161 K. The Co 2 Ge 2 Te 6 monolayer is half-metal, and the spin-β electron is a semiconductor with a gap of 1.311 eV. The Co 2 Ge 2 Te 6 monolayer shows in-plane anisotropy, with a magnetic anisotropy energy (MAE) of −10.2 meV/f.u., and Te atoms contribute −9.94 meV/f.u. Moreover, the bilayer with AA-and ABstackings has MAEs of −24.659 and −24.492 meV/.f.u., respectively. Most interestingly, bilayers present ferromagnetic half-metallicity independent of stacking orders. The multilayers (N ≥ 6) present ferromagnetic half metal, while magnetoelectronic properties are related with stacking patterns in thinner multilayers. Moreover, the magnetoelectronic properties of bulk are related with stacking patterns. The multilayers' magnetic orders are determined by the super−super exchange and weak van der Waals (vdW) interaction. Moreover, the Co 2 Ge 2 Te 6 monolayer and multilayers show good dynamical and thermal stability. These findings could pave the way of application of intrinsic ferromagnetic Co 2 Ge 2 Te 6 in the spintronics.

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Ni(NCS)₂ monolayer: a robust bipolar magnetic semiconductor

Sun

Liu

et al. 2021

Nanoscale

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Theoretical simulation and design of two-dimensional ferromagnetic materials

Cited by 5 publications

References 56 publications

B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Van der Waals Stacked 2D-Layered Co₂Ge₂Te₆ with High Curie Temperature and Large Magnetic Crystal Anisotropy

Ni(NCS)₂ monolayer: a robust bipolar magnetic semiconductor

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Theoretical simulation and design of two-dimensional ferromagnetic materials

Cited by 5 publications

References 56 publications

B2S3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

B2S3 monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Van der Waals Stacked 2D-Layered Co2Ge2Te6 with High Curie Temperature and Large Magnetic Crystal Anisotropy

Ni(NCS)2 monolayer: a robust bipolar magnetic semiconductor

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B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

B₂S₃ monolayer: a two-dimensional direct-gap semiconductor with tunable band-gap and high carrier mobility

Van der Waals Stacked 2D-Layered Co₂Ge₂Te₆ with High Curie Temperature and Large Magnetic Crystal Anisotropy

Ni(NCS)₂ monolayer: a robust bipolar magnetic semiconductor