Theoretical research on critical thickness of HgCdTe epitaxial layers

Abstract

Based on the relationships between stress and strain in an arbitrary coordinate system, the elastic theory of crystal and the dislocation gliding theory, the critical thicknesses of HgCdTe/CdZnTe oriented in the ［111］ and ［211］ directions are calculated, and the dependence of the critical thickness of HgCdTe on substrate composition and film composition are studied. The results show that the critical thickness of HgCdTe depends sensitively on substrate composition and film composition. For 10μm films oriented in the ［111］ direction prepared by liquid phase epitaxy, the substrate composition and the films composition must match to within ±0.225‰ and ±5‰, respectively, to prevent the occurence of misfit dislocations. In addition, for 10μm films oriented in the ［211］ direction prepared by molecular beam epitaxy, the actual ranges of zinc composition and the films composition are ±0.2‰ and ±4‰ for the films to remain below the critical thickness, respectively.

The determination of thexvalue in doped Hg1−xCdxTe by transmission spectra

“…[9,10] For comparison, the unintentionally (V Hg )-doped HgCdTe epilayers grown by MBE and liquid phase epitaxy (LPE, on the substrate of CdZnTe) were also prepared. [11] The absorption spectra were measured by an evacuated Fourier transform infrared spectrometer, which was equipped with a beamsplitter of KBr and a liquid-nitrogen-cooled HgCdTe detector. The spectral resolution was set at 2 cm −1 .…”