2018
DOI: 10.1039/c8ra03281e
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Theoretical modeling of charge transport in triphenylamine–benzimidazole based organic solids for their application as host-materials in phosphorescent OLEDs

Abstract: Dynamic disorder and electric field affect the charge (hole and electron) transport in host-materials for OLEDs.

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Cited by 11 publications
(19 citation statements)
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“…On the other hand, when there is an applied bias, the drift-coupled diffusion is anticipated, which improves the traversing carrier energy rate in molecular devices. As reported in earlier studies, the effect of the applied electric field, doping, and other interactions (including thermal effect) on charge and energy transport can be quantified by entropy parameters S and h S . Based on eq , one can emphasize that the variation in nonsteady energy flux strongly depends on the change in entropy due to various internal and external interactions of the system.…”
Section: Modelmentioning
confidence: 91%
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“…On the other hand, when there is an applied bias, the drift-coupled diffusion is anticipated, which improves the traversing carrier energy rate in molecular devices. As reported in earlier studies, the effect of the applied electric field, doping, and other interactions (including thermal effect) on charge and energy transport can be quantified by entropy parameters S and h S . Based on eq , one can emphasize that the variation in nonsteady energy flux strongly depends on the change in entropy due to various internal and external interactions of the system.…”
Section: Modelmentioning
confidence: 91%
“…The generalized charge and energy transport relation for organic semiconductors can be described as 3 , 5 where is the carrier’s energy transfer rate, q is the electronic charge, n is the electron density, ε is the electric permittivity of the material, and D is the diffusion coefficient. From the above generalized charge and energy transport relation ( eq 1 ), the carrier energy rate directly depends on the charge diffusion coefficient and carrier density (electron or hole) in the concerned molecular devices.…”
Section: Modelmentioning
confidence: 99%
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