2007
DOI: 10.1016/j.jallcom.2006.06.002
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Theoretical investigations of the optical spectra and EPR parameters for Yb3+ ions in GaN epilayer

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Cited by 20 publications
(13 citation statements)
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“…It has been found that initial CF parameters, calculated using the point charge model, presented in Ref. [23] and here strongly differ in the best-fit set. The disagreement between the starting and final fitting parameter values in these two approaches suggests that the observed energy level diagram cannot be related to the substitutional position of the Yb 3+ ion on a Ga 3+ cation site only.…”
Section: Theoretical Approachmentioning
confidence: 77%
See 2 more Smart Citations
“…It has been found that initial CF parameters, calculated using the point charge model, presented in Ref. [23] and here strongly differ in the best-fit set. The disagreement between the starting and final fitting parameter values in these two approaches suggests that the observed energy level diagram cannot be related to the substitutional position of the Yb 3+ ion on a Ga 3+ cation site only.…”
Section: Theoretical Approachmentioning
confidence: 77%
“…It is expected that Yb 3+ ions in GaN should have only seven 4f electrons energy levels due to the Yb 3+ ions occupying sites of C3 v symmetry: four levels of the ground 2 F 7/2 multiplet and three levels of the excited 2 F 5/2 multiplets, respectively. By investigating the low temperature high resolution PL and CL spectra of Yb-doped GaN, we have established an experimental energy level diagram in our recent work [23]. However, many lines detected in near infrared spectral region could not be associated with Yb 3+ ions occupying substitutional Ga 3+ ion sites.…”
Section: Theoretical Approachmentioning
confidence: 98%
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“…With the development of high-power InGaAs diode laser the Yb 3+ -doped laser crystal materials have been attracted great interesting [1][2][3][4][5][6][7][8][9][10][11][12][13]. In comparison with Nd 3+ active ion the Yb 3+ ion has some important advantages.…”
Section: Introductionmentioning
confidence: 99%
“…With the development of high performance InGaAs diode laser, the Yb 3+ -doped laser materials have been attracted great interesting [1][2][3][4][5][6][7][8][9][10]. Yb 3+ has only two manifolds, i.e.…”
Section: Introductionmentioning
confidence: 99%