Rate coefficients for elementary reactions connected
to the potential
energy wells of Si2H2Cl4, Si2Cl6, and Si2Cl4, which are
important Si2 species in chemical vapor deposition (CVD)
processes that use chlorosilanes as silicon source gases, were determined
through the Rice–Ramsperger–Kassel–Marcus theory
under various conditions of temperature and pressure. The optimized
structures and vibrational frequencies of the reactants, products,
and transition state were obtained using (U)B3LYP/6-31+G(d,p), and
the single-point energies of the optimized structures were recalculated
using the coupled cluster method with single and double excitations
plus triple perturbation (U)CCSD(T) with complete basis set extrapolation.
Many of the unimolecular decomposition channels and chemical activation
reactions investigated in this work were found to be in the fall-off
regime under subatmospheric to moderately high-pressure conditions
so that it is expected that accurate modeling of the gas phase in
the chlorosilane CVD reactor requires careful determination of the
rate coefficients as functions of temperature and pressure for the
conditions of interest, instead of using high-pressure limit rate
coefficients. The rate coefficients determined here were expressed
through Chebyshev coefficients and also modified Arrhenius parameters
to be used in simulations of systems under a wide range of temperature
and pressure conditions.