Among 600 nm class transition-metal
oxynitrides, BaTaO2N with a cubic Pm3̅m perovskite-type
structure is promising for solar water oxidation due to its absorption
of visible light up to 660 nm, narrower band gap (E
g = 1.9 eV), appropriate valence band edge position for
oxygen evolution, good stability in concentrated alkaline solutions,
and nontoxicity. However, high defect density stemmed from long high-temperature
ammonolysis limits the separation and transfer efficiency of photogenerated
charge carriers in BaTaO2N. Here, a NH3 delivery
system is specifically localized just above the synthesis mixture
to reduce the synthesis time and defect density of BaTaO2N by a fresh supply of more active nitriding species and minimizing
the generation of N2 and H2. Particularly, the
effects of synthesis temperature (700–950 °C), synthesis
time (1–8 h), and gas composition are systematically investigated
to gain insights into the formation of single-phase BaTaO2N by solid-state reaction and flux method. Time-dependent experiments
conducted at 950 °C show that single-phase BaTaO2N
can be synthesized ≥6 and ≥4 h by solid-state reaction
and flux method, respectively, revealing the advantage of the flux
method over solid-state reaction in a localized NH3 delivery
system. Subsequently, the separation and transfer efficiency and kinetics
of photogenerated charge carriers are studied in BaTaO2N samples. Photoelectrochemical studies made it possible to resolve
trends during visible-light-induced water oxidation, evidencing the
inverse relationship between recombination and charge transfer phenomena.
Transient absorption spectroscopy reveals that the dynamics of the
photogenerated charge carriers in both types of BaTaO2N
samples are different: (i) BaTaO2N synthesized by flux
method has a greater number of holes despite the similar number of
deeply trapped charge carriers and (ii) solid-state reaction led to
the formation of a higher number of free electrons in BaTaO2N. The findings demonstrate the advantage of reducing the transfer
distance of active nitriding species to the surface of the synthesis
mixture for enhancing the photoelectrochemical water oxidation of
BaTaO2N at neutral pH.